Generation of electronically excited products in the multiphoton dissociation of phosgene at 193 nm

1983 ◽  
Author(s):  
M. W. Wilson ◽  
M. Rothschild ◽  
C. K. Rhodes ◽  
Test ◽  
Carole S. Allman ◽  
...  
Keyword(s):  
Electronically Excited ◽  
Multiphoton Dissociation ◽  
193 Nm

Multiphoton dissociation of OCCl2 at 193 nm: Formation of electronically excited Cl2

1983 ◽  
Vol 78 (6) ◽  
pp. 3779-3784 ◽  
Author(s):  
M. W. Wilson ◽  
M. Rothschild ◽  
C. K. Rhodes
Keyword(s):  
Electronically Excited ◽  
Multiphoton Dissociation ◽  
193 Nm

Λ-doublet populations in CH(A2Δ) produced in the 193 nm multiphoton dissociation of (CH3)2CO, (CD3)2CO, (CH3)2S and CH3NO2

1984 ◽  
Vol 88 (1) ◽  
pp. 163-170 ◽  
Author(s):  
Takashi Nagata ◽  
Mutsumi Suzuki ◽  
Kaoru Suzuki ◽  
Tamotsu Kondow ◽  
Kozo Kuchitsu
Keyword(s):  
Multiphoton Dissociation ◽  
193 Nm

Production of Electronically Excited P2 and in from ArF Excimer Laser Irradiation of InP

1986 ◽  
Vol 75 ◽  
Author(s):  
V. M. Donnelly ◽  
V. R. McCrary ◽  
D. Brasen
Keyword(s):  
Excimer Laser ◽  
Laser Frequency ◽  
Laser Exposure ◽  
Resonance Fluorescence ◽  
Thermally Activated ◽  
Ejection Process ◽  
Electronically Excited ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
193 Nm

AbstractWe have investigated the decomposition of single-crystal InP surfaces irradiated by a 193 nm ArF excimer laser. These studies provide insight into mechanisms of thermal decomposition, surface diffusion and epitaxy. Pulsed laser exposure leads to evolution of P2 from the surface which is detected by resonance fluorescence resulting from a fortuitous overlap of the v″ = 0 with the laser frequency. P2-evolution occurs above a threshold fluence of 0.12 J/cm2 and lags the peak laser intensity by ∼20 nsec. These observations are explained by a thermally activated decomposition mechanism, as opposed to any direct, photochemical ejection process. Peak surface temperatures have been calculated and are used to predict P2 yields as a function of fluence and time which are in good agreement with experiments. These findings are also discussed in relation to previous studies of excimer laser stimulated growth of InP.

scholarly journals Multiphoton dissociation dynamics of the indenyl radical at 248 nm and 193 nm

2019 ◽  
Vol 151 (17) ◽  
pp. 174303
Author(s):  
Erin N. Sullivan ◽  
Bethan Nichols ◽  
Stephen von Kugelgen ◽  
Gabriel da Silva ◽  
Daniel M. Neumark
Keyword(s):  
Dissociation Dynamics ◽  
Multiphoton Dissociation ◽  
193 Nm

Excimer Laser Photodissociation Studies of Disilane AT 193 nm

1988 ◽  
Vol 131 ◽  
Author(s):  
J. M. Jasinski ◽  
J. O. Chu ◽  
M. H. Begemann
Keyword(s):  
Excimer Laser ◽  
Optical Emission ◽  
Mass Spectrometric ◽  
Multiphoton Dissociation ◽  
Arf Excimer Laser ◽  
193 Nm ◽  
Laser Spectroscopic ◽  
Mass Spectrometric Techniques

ABSTRACTOptical emission, laser spectroscopic and mass spectrometric techniques have been used to study the ArF excimer laser induced photochemistry of disilane at 193 nm. Evidence is found for the formation of a number of photofragments from single and multiphoton dissociation. Effects due to secondary photolysis are observed at high excimer laser repetition rates.

UV Laser photolysis of C3O2 at 193 nm: Emission from electronically excited C, CO and C2

1982 ◽  
Vol 20 (4) ◽  
pp. 277-286 ◽  
Author(s):  
M. Umemoto ◽  
H. Shinohara ◽  
N. Nishi ◽  
R. Shimada
Keyword(s):  
Laser Photolysis ◽  
Uv Laser ◽  
Electronically Excited ◽  
193 Nm

Multi-photon dissociation of CHBr3 at 248 and 193 nm: observation of the electronically excited CH() product

1998 ◽  
Vol 238 (2) ◽  
pp. 329-341 ◽  
Author(s):  
Jörg Lindner ◽  
Karsten Ermisch ◽  
Ralf Wilhelm
Keyword(s):  
Electronically Excited ◽  
193 Nm
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