Excimer Laser Photodissociation Studies of Disilane AT 193 nm

1988 ◽  
Vol 131 ◽  
Author(s):  
J. M. Jasinski ◽  
J. O. Chu ◽  
M. H. Begemann
Keyword(s):  
Excimer Laser ◽  
Optical Emission ◽  
Mass Spectrometric ◽  
Multiphoton Dissociation ◽  
Arf Excimer Laser ◽  
193 Nm ◽  
Laser Spectroscopic ◽  
Mass Spectrometric Techniques

ABSTRACTOptical emission, laser spectroscopic and mass spectrometric techniques have been used to study the ArF excimer laser induced photochemistry of disilane at 193 nm. Evidence is found for the formation of a number of photofragments from single and multiphoton dissociation. Effects due to secondary photolysis are observed at high excimer laser repetition rates.

scholarly journals 193-nm deep-UV lithography system using a line-narrowed ArF excimer laser

1993 ◽  
Author(s):  
Bruce W. Smith ◽  
Malcolm C. Gower ◽  
Mark Westcott ◽  
Lynn F. Fuller
Keyword(s):  
Excimer Laser ◽  
Uv Lithography ◽  
Arf Excimer Laser ◽  
Deep Uv ◽  
193 Nm ◽  
Lithography System

scholarly journals Fabrication of Superhydrophobic Silicone Rubber with Periodic Micro/Nano-Suction Cup Structure by ArF Excimer Laser-Induced Photodissociation

Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 870 ◽  
Author(s):  
Masayuki Okoshi
Keyword(s):  
Excimer Laser ◽  
Silicone Rubber ◽  
Focal Point ◽  
Pulse Number ◽  
Entire Surface ◽  
Suction Cup ◽  
Atomic Force ◽  
Superhydrophobic Property ◽  
Arf Excimer Laser ◽  
193 Nm

A 193-nm ArF excimer laser was used to induce the photodissociation of Si–O bonds of silicone rubber in order to fabricate a periodic micro/nano-suction cup silicone structure, approximately 1 μm in diameter and 2 μm in height at regular intervals of 2.5 μm. The laser was focused on Al-coated silicone rubber by each silica glass microsphere 2.5 μm in diameter, which covered the entire surface of the silicone rubber. The silicone rubber underneath each microsphere photochemically swelled after laser-ablating the coated Al to limit the diameter of the swelling. Simultaneously, the coated Al was able to adjust the focal point to the surface of the silicone rubber to form a hole approximately 500 nm in diameter, centered at the swollen silicone. The dependences of the thickness of the coated-Al and the laser pulse number are discussed, based on the observations of a scanning electron microscope (SEM) and an atomic force microscope (AFM). The superhydrophobic property of the fabricated micro/nano-suction cup structure was successfully found.

Excimer Laser Induced Photochemistry of Silane-Ammonia Mixtures

1988 ◽  
Vol 131 ◽  
Author(s):  
J. M. Jasinski ◽  
D. B. Beach ◽  
R. D. Estes
Keyword(s):  
Mass Spectrometry ◽  
Steady State ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Shot ◽  
Time Resolved ◽  
Single Laser ◽  
Arf Excimer Laser ◽  
193 Nm

ABSTRACTSteady-state and time resolved molecular beam sampling mass spectrometry have been used to study the ArF excimer laser induced photochemistry of silaneammonia mixtures at 193 nm. Under both steady state and single laser shot conditions, products as complicated as tetraaminosilane are formed promptly. A mechanism which accounts for the formation of all observed products is proposed and evaluated.

Efficient Photochemical Conversion of N2O into N2and O2by 193-nm-ArF-excimer Laser in N2or Air at Atmospheric Pressure

2005 ◽  
Vol 34 (6) ◽  
pp. 812-813 ◽  
Author(s):  
Masaharu Tsuji ◽  
Hiroshi Sako ◽  
Kenji Noda ◽  
Makoto Senda ◽  
Taro Hamagami ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Atmospheric Pressure ◽  
Photochemical Conversion ◽  
Arf Excimer Laser ◽  
193 Nm

Advanced ArF excimer laser for 193 nm lithography

1998 ◽  
Vol 41-42 ◽  
pp. 75-78 ◽  
Author(s):  
R. Lindner ◽  
U. Stamm ◽  
R. Pätzel ◽  
D. Basting
Keyword(s):  
Excimer Laser ◽  
Arf Excimer Laser ◽  
193 Nm

Toward Growing III-V Clusters with Metalorganic Precursors

1997 ◽  
Vol 468 ◽  
Author(s):  
A. Demchuk ◽  
J. Porter ◽  
B. Koplitz
Keyword(s):  
Excimer Laser ◽  
Vacuum Chamber ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Quadrupole Mass ◽  
Reaction Region ◽  
High Vacuum Chamber ◽  
Arf Excimer Laser ◽  
193 Nm ◽  
Pulsed Nozzle

ABSTRACTThe present work reports on the formation of GaN-containing clusters from metalorganic precursors by combining pulsed laser photolysis and pulsed nozzle methods. Ammonia (NH3) and triethylgallium (C2H5)3Ga (TEG) or trimethylgallium (CH3)3Ga (TMG) with He, Ar, or N2 as the carrier gas are introduced into a high vacuum chamber via a specialized dual pulsed nozzle source. The light from an ArF excimer laser (193 nm, 23 ns FWHM) is focused into the mixing and reaction region of the nozzle source, and the products are then mass analyzed with a quadrupole mass spectrometer. Efficient laser-assisted growth of (GaN)x-containing clusters is shown with this technique.

Production of Electronically Excited P2 and in from ArF Excimer Laser Irradiation of InP

1986 ◽  
Vol 75 ◽  
Author(s):  
V. M. Donnelly ◽  
V. R. McCrary ◽  
D. Brasen
Keyword(s):  
Excimer Laser ◽  
Laser Frequency ◽  
Laser Exposure ◽  
Resonance Fluorescence ◽  
Thermally Activated ◽  
Ejection Process ◽  
Electronically Excited ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
193 Nm

AbstractWe have investigated the decomposition of single-crystal InP surfaces irradiated by a 193 nm ArF excimer laser. These studies provide insight into mechanisms of thermal decomposition, surface diffusion and epitaxy. Pulsed laser exposure leads to evolution of P2 from the surface which is detected by resonance fluorescence resulting from a fortuitous overlap of the v″ = 0 with the laser frequency. P2-evolution occurs above a threshold fluence of 0.12 J/cm2 and lags the peak laser intensity by ∼20 nsec. These observations are explained by a thermally activated decomposition mechanism, as opposed to any direct, photochemical ejection process. Peak surface temperatures have been calculated and are used to predict P2 yields as a function of fluence and time which are in good agreement with experiments. These findings are also discussed in relation to previous studies of excimer laser stimulated growth of InP.

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