Temperature dependence of the figures of merit for blocked impurity band detectors

1988 ◽  
Vol 63 (11) ◽  
pp. 5583-5588 ◽  
Author(s):  
Frank Szmulowicz ◽  
Frank L. Madarasz ◽  
Jeffrey Diller
Keyword(s):  
Temperature Dependence ◽  
Impurity Band ◽  
Figures Of Merit ◽  
Blocked Impurity Band Detectors

Si:Sb blocked impurity band detectors for infrared astronomy

1992 ◽  
Vol 72 (1) ◽  
pp. 273-275 ◽  
Author(s):  
James E. Huffman ◽  
A. G. Crouse ◽  
B. L. Halleck ◽  
T. V. Downes ◽  
Terry L. Herter
Keyword(s):  
Impurity Band ◽  
Infrared Astronomy ◽  
Blocked Impurity Band Detectors

Germanium Far Infrared Blocked Impurity Band Detectors

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Detection ◽  
Long Wavelength ◽  
Current Voltage ◽  
Heavily Doped ◽  
Absorbing Layer ◽  
Blocked Impurity Band Detectors ◽  
Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

Temperature Dependence of the Electrical Transport of Carbon Doped Gan

1996 ◽  
Vol 421 ◽  
Author(s):  
Wim Geerts ◽  
J.D. MacKenzie ◽  
C.R. Abernathy ◽  
S.J Pearton ◽  
Thomas Schmiedel
Keyword(s):  
Activation Energy ◽  
Charge Transport ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Effective Activation Energy ◽  
Impurity Band ◽  
Hall Voltage ◽  
Effective Activation ◽  
Carbon Doped ◽  
P Type

AbstractThe temperature dependence of the Hall voltage and resistivity of highly carbon doped GaN were measured. From the sign of the Hall voltage, the material appears to be p-type. Charge transport takes place in an impurity band and the valence band. The effective activation energy as estimated from the maximum in the temperature versus Hall voltage relation is 10–30 meV.

Extended mode in blocked impurity band detectors for terahertz radiation detection

2014 ◽  
Vol 105 (14) ◽  
pp. 143501 ◽  
Author(s):  
K. S. Liao ◽  
N. Li ◽  
C. Wang ◽  
L. Li ◽  
Y. L. Jing ◽  
...  
Keyword(s):  
Terahertz Radiation ◽  
Radiation Detection ◽  
Impurity Band ◽  
Blocked Impurity Band Detectors
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