Extended mode in blocked impurity band detectors for terahertz radiation detection

2014 ◽  
Vol 105 (14) ◽  
pp. 143501 ◽  
Author(s):  
K. S. Liao ◽  
N. Li ◽  
C. Wang ◽  
L. Li ◽  
Y. L. Jing ◽  
...  
Keyword(s):  
Terahertz Radiation ◽  
Radiation Detection ◽  
Impurity Band ◽  
Blocked Impurity Band Detectors

Ion-implanted Si:P blocked-impurity-band photodetectors for far-infrared and terahertz radiation detection

2013 ◽  
Author(s):  
Kaisheng Liao ◽  
Ning Li ◽  
Xihui Liu ◽  
Liang Huang ◽  
Qiaoyu Zeng ◽  
...  
Keyword(s):  
Terahertz Radiation ◽  
Radiation Detection ◽  
Far Infrared ◽  
Impurity Band ◽  
Ion Implanted

scholarly journals Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Room Temperature ◽  
Voltage Drop ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Thz Radiation ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

Si:Sb blocked impurity band detectors for infrared astronomy

1992 ◽  
Vol 72 (1) ◽  
pp. 273-275 ◽  
Author(s):  
James E. Huffman ◽  
A. G. Crouse ◽  
B. L. Halleck ◽  
T. V. Downes ◽  
Terry L. Herter
Keyword(s):  
Impurity Band ◽  
Infrared Astronomy ◽  
Blocked Impurity Band Detectors

Germanium Far Infrared Blocked Impurity Band Detectors

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Detection ◽  
Long Wavelength ◽  
Current Voltage ◽  
Heavily Doped ◽  
Absorbing Layer ◽  
Blocked Impurity Band Detectors ◽  
Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

Quantum well intrasubband photodetector for far infared and terahertz radiation detection

2007 ◽  
Vol 91 (7) ◽  
pp. 073510 ◽  
Author(s):  
David Z.-Y. Ting ◽  
Yia-Chung Chang ◽  
Sumith V. Bandara ◽  
Sarath D. Gunapala
Keyword(s):  
Quantum Well ◽  
Terahertz Radiation ◽  
Radiation Detection
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