Noise spectroscopy of deep level (DX) centers in GaAs‐AlxGa1−xAs heterostructures

1988 ◽  
Vol 63 (5) ◽  
pp. 1541-1548 ◽  
Author(s):  
J. R. Kirtley ◽  
T. N. Theis ◽  
P. M. Mooney ◽  
S. L. Wright
Keyword(s):  
Deep Level ◽  
Dx Centers ◽  
Noise Spectroscopy

Noise spectroscopy of metastable deep level centers in Mg-doped GaN

2003 ◽  
Vol 340-342 ◽  
pp. 381-384 ◽  
Author(s):  
D. Seghier ◽  
H.P. Gislason
Keyword(s):  
Deep Level ◽  
Noise Spectroscopy ◽  
Mg Doped

Evidence for Metastabile State of DX Center in AxGa1-xAs

1992 ◽  
Vol 262 ◽  
Author(s):  
Subhasis Ghosh ◽  
Vikram Kumar
Keyword(s):  
Activation Energy ◽  
Deep Level Transient Spectroscopy ◽  
Thermal Activation ◽  
Deep Level ◽  
Thermal Activation Energy ◽  
Dx Centers ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Silicon Doped ◽  
First Time

ABSTRACTPhoto-Deep Level Transient Spectroscopy with 1.38 eV light reveals a new level with thermal activation energy 0.2 eV of DX centers in silicon doped Alx Ga1-xAs (x = 0.26) for the first time. The observation of this level directly proves the negative-U properties of DX centers and the existence of thermodynamically metastable state DX.

Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of DX-centers in AlxGa1-xAs:Sn

1988 ◽  
Vol 27 (Part 1, No. 5) ◽  
pp. 738-745 ◽  
Author(s):  
Michihiro Fudamoto ◽  
Kenichiro Tahira ◽  
Jun Morimoto ◽  
Toru Miyakawa
Keyword(s):  
Spectral Analysis ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Dx Centers ◽  
Transient Spectroscopy

scholarly journals Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices

2015 ◽  
Vol 242 ◽  
pp. 449-458 ◽  
Author(s):  
Eddy Simoen ◽  
Bogdan Cretu ◽  
Wen Fang ◽  
Marc Aoulaiche ◽  
Jean Marc Routoure ◽  
...  
Keyword(s):  
Numerical Modeling ◽  
Time Constant ◽  
Polycrystalline Silicon ◽  
Deep Level ◽  
Low Frequency ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Single Defect ◽  
Noise Spectroscopy

The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined and illustrated for the case of traps in Ultra-Thin Buried Oxide Silicon-on-Insulator nMOSFETs and for vertical polycrystalline silicon nMOSFETs. It will be shown that for scaled devices the GR noise is originating from a single defect, giving rise to a so-called Random Telegraph Signal (RTS). Several methods will be described for an accurate extraction of the RTS parameters (amplitude, up and down time constant). It will be demonstrated that besides the deep-level parameters also the position of the trap in the channel can be derived from a numerical modeling of the RTS amplitude.

scholarly journals Studies of Deep Level Transient Spectroscopy of DX Centers in GaAlAs:Te under Uniaxial Stress

1992 ◽  
Vol 83-87 ◽  
pp. 853-858
Author(s):  
Ming Fu Li ◽  
Peter Y. Yu ◽  
Eicke R. Weber ◽  
E. Bauser ◽  
W.L. Hansen ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Uniaxial Stress ◽  
Dx Centers ◽  
Transient Spectroscopy

Deep-level-noise spectroscopy of ion-implanted polysilicon thin films

1988 ◽  
Vol 38 (3) ◽  
pp. 1958-1962 ◽  
Author(s):  
A. J. Madenach ◽  
J. Werner
Keyword(s):  
Thin Films ◽  
Deep Level ◽  
Noise Spectroscopy ◽  
Ion Implanted

Pressure-dependent DLTS Experiments on Si-DOPED AlGaAs

1987 ◽  
Vol 104 ◽  
Author(s):  
John W. Farmer ◽  
Harold P. Hjalmarson ◽  
G. A. Samara
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect Complex ◽  
Persistent Photoconductivity ◽  
Dx Centers ◽  
Si Doped ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Dlts Spectra

ABSTRACTPressure dependent Deep Level Transient Spectroscopy (DLTS) experiments are used to measure the properties of the deep donors (DX-centers) responsible for the persistent photoconductivity effect in Si-doped AlGaAs. The sample dependence of the DLTS spectra shows evidence for a defect complex involved in the DX-center.

DX CENTERS IN AlGaN

1999 ◽  
Vol 13 (11) ◽  
pp. 1363-1378 ◽  
Author(s):  
M. D. McCLUSKEY ◽  
C. G. VAN de WALLE ◽  
N. M. JOHNSON ◽  
D. P. BOUR ◽  
M. KNEISSL
Keyword(s):  
Deep Level ◽  
Far Infrared ◽  
Shallow Donor ◽  
Experimental Investigations ◽  
Nitride Semiconductors ◽  
Dx Centers ◽  
Free Carriers ◽  
Peak Intensity ◽  
Oxygen Impurities ◽  
Raman Peak Intensity

In this letter, recent theoretical and experimental investigations of DX centers in Al x Ga 1-x N are reviewed. Due to the technological importance of III–V nitride semiconductors, studies of deep-level defects in AlGaN have attracted a great deal of interest. Oxygen impurities form DX centers in GaN under hydrostatic pressure and in Al x Ga 1-x N alloys. For GaN under pressures greater than 20 GPa, the DX level emerges from the conduction band, leading to a decrease in the free-electron concentration. The localization of free carriers leads to a decrease in the far-infrared absorption and an increase in the LO Raman peak intensity. In Al x Ga 1-x N alloys, Hall effect and persistent photoconductivity measurements indicate that the DX state is energetically favorable for x>0.3. The experimental data for oxygen DX centers are in excellent agreement with first-principles calculations. Experiments have shown that silicon remains a shallow donor up to at least x=0.5 and theory indicates that it may remain shallow up to x=1.

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