Noise spectroscopy of metastable deep level centers in Mg-doped GaN

2003 ◽  
Vol 340-342 ◽  
pp. 381-384 ◽  
Author(s):  
D. Seghier ◽  
H.P. Gislason
Keyword(s):  
Deep Level ◽  
Noise Spectroscopy ◽  
Mg Doped

Capacitance and Current Deep-Level Transient Fourier Spectroscopy (DLTFS) for the Characterization of Defect States in Mg-Doped GaN-on-Si p+n Diodes

2021 ◽  
Vol MA2021-01 (34) ◽  
pp. 2043-2043
Author(s):  
Yoann Lechaux ◽  
Albert Minj ◽  
Laurence Méchin ◽  
Hu Liang ◽  
Karen Geens ◽  
...  
Keyword(s):  
Deep Level ◽  
Fourier Spectroscopy ◽  
Defect States ◽  
Gan On Si ◽  
Mg Doped

scholarly journals Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy

2020 ◽  
Vol 36 (2) ◽  
pp. 024002
Author(s):  
Y Lechaux ◽  
A Minj ◽  
L Méchin ◽  
H Liang ◽  
K Geens ◽  
...  
Keyword(s):  
Deep Level ◽  
Fourier Spectroscopy ◽  
Defect States ◽  
Gan On Si ◽  
Mg Doped

Photocurrent spectroscopy investigation of deep level defects in Mg-doped GaN and Mg-doped AlxGa1−xN (0.20

2009 ◽  
Vol 95 (13) ◽  
pp. 131102
Author(s):  
P. Batoni ◽  
E. B. Stokes ◽  
S. F. LeBoeuf ◽  
T. Nohava
Keyword(s):  
Deep Level ◽  
Photocurrent Spectroscopy ◽  
Mg Doped

Noise spectroscopy of deep level (DX) centers in GaAs‐AlxGa1−xAs heterostructures

1988 ◽  
Vol 63 (5) ◽  
pp. 1541-1548 ◽  
Author(s):  
J. R. Kirtley ◽  
T. N. Theis ◽  
P. M. Mooney ◽  
S. L. Wright
Keyword(s):  
Deep Level ◽  
Dx Centers ◽  
Noise Spectroscopy

scholarly journals Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices

2015 ◽  
Vol 242 ◽  
pp. 449-458 ◽  
Author(s):  
Eddy Simoen ◽  
Bogdan Cretu ◽  
Wen Fang ◽  
Marc Aoulaiche ◽  
Jean Marc Routoure ◽  
...  
Keyword(s):  
Numerical Modeling ◽  
Time Constant ◽  
Polycrystalline Silicon ◽  
Deep Level ◽  
Low Frequency ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Single Defect ◽  
Noise Spectroscopy

The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined and illustrated for the case of traps in Ultra-Thin Buried Oxide Silicon-on-Insulator nMOSFETs and for vertical polycrystalline silicon nMOSFETs. It will be shown that for scaled devices the GR noise is originating from a single defect, giving rise to a so-called Random Telegraph Signal (RTS). Several methods will be described for an accurate extraction of the RTS parameters (amplitude, up and down time constant). It will be demonstrated that besides the deep-level parameters also the position of the trap in the channel can be derived from a numerical modeling of the RTS amplitude.

Deep-level-noise spectroscopy of ion-implanted polysilicon thin films

1988 ◽  
Vol 38 (3) ◽  
pp. 1958-1962 ◽  
Author(s):  
A. J. Madenach ◽  
J. Werner
Keyword(s):  
Thin Films ◽  
Deep Level ◽  
Noise Spectroscopy ◽  
Ion Implanted

Deep Level Defects in Mg-Doped GaN

1996 ◽  
Vol 423 ◽  
Author(s):  
Gyu-Chul Yi ◽  
Bruce W. Wessels
Keyword(s):  
Excited State ◽  
Schottky Barrier ◽  
Vapor Phase ◽  
Deep Level ◽  
Relaxation Times ◽  
Trapping Level ◽  
Organic Vapor ◽  
Metal Organic ◽  
Threshold Energies ◽  
Mg Doped

AbstractDeep level defects in Mg compensated GaN grown by metal-organic vapor phase epitaxy were investigated using photocapacitance spectroscopy measurements on Schottky barrier diodes. Addition of magnesium resulted in the formation of a series of deep centers with optical threshold energies of 1.0, 1.2, 1.8, and 3.1 eV. Upon annealing the epitaxial GCN in nitrogen at 850°C the ind-gap levels disappeared and only the trapping level at 3.1 eV remained. The mid-gap levels are ascribed to Mg dopant complexes which may in part be responsible for low doping efficiency of Mg in the as-grown, doped GaN. The deep level at 3.1 eV commonly observed from all Mgdoped GaN most likely involves the Mg acceptor. The photo-excited state of the 3.1 eV level had relaxation times of the order of 103 sec at 295 K.

Thermal quenching effect of an infrared deep level in Mg-doped p-type GaN films

2002 ◽  
Vol 80 (10) ◽  
pp. 1767-1769 ◽  
Author(s):  
Keunjoo Kim ◽  
Sang Jo Chung
Keyword(s):  
Deep Level ◽  
Thermal Quenching ◽  
Quenching Effect ◽  
P Type ◽  
Mg Doped
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