Deep-level-noise spectroscopy of ion-implanted polysilicon thin films

1988 ◽  
Vol 38 (3) ◽  
pp. 1958-1962 ◽  
Author(s):  
A. J. Madenach ◽  
J. Werner
Keyword(s):  
Thin Films ◽  
Deep Level ◽  
Noise Spectroscopy ◽  
Ion Implanted

A technique to prepare cross-sectional TEM specimens of semiconducting devices

1986 ◽  
Vol 44 ◽  
pp. 742-743
Author(s):  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Sample Surface ◽  
Specific Region ◽  
Cross Sectional ◽  
Thin Sections ◽  
The Past ◽  
Device Structures ◽  
Ion Implanted

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.

Noise spectroscopy of metastable deep level centers in Mg-doped GaN

2003 ◽  
Vol 340-342 ◽  
pp. 381-384 ◽  
Author(s):  
D. Seghier ◽  
H.P. Gislason
Keyword(s):  
Deep Level ◽  
Noise Spectroscopy ◽  
Mg Doped

The Defect Structure of BaTiO3 Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
L.A. Wills ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Defect Structure ◽  
Oxygen Vacancies ◽  
Vacuum Annealing ◽  
Deep Level ◽  
Energy Levels ◽  
The Other ◽  
Optical Cross Section ◽  
Impurity Defects

AbstractThe defect structure of BaTiO3 thin films grown on (100) Si was examined using transient photocapacitance spectroscopy. The concentration, optical cross section and associated energy levels of both native and impurity defects in as-grown and annealed BaTiO3 films were evaluated. Deep level defects withpeak energies of Ev+1.8, Ev+2.4, Ev+2.7, Ev+3.0-3.1 and Ev+3.2-3.3 eV were observed in the as-grown films. Upon vacuum annealing, the concentration of the traps at Ev+3.0 and Ev+3.2 eV increased while the concentration of the traps at Ev+ 1.8 and Ev+2.4 eV decreased. The levels at Ev+3.0-3.1 and Ev+3.2-3.3 eV are attributed to oxygen vacancies. The other levels are tentatively ascribed to Fe and Fe related defects.

Statistical and fractal analysis of nitrogen ion implanted tantalum thin films

2020 ◽  
Vol 126 (6) ◽  
Author(s):  
A. H. Ramezani ◽  
S. Hoseinzadeh ◽  
Zh. Ebrahiminejad
Keyword(s):  
Thin Films ◽  
Fractal Analysis ◽  
Nitrogen Ion ◽  
Ion Implanted

Evolution of multiple dielectric responses and relaxor-like behaviors in pure and nitrogen-ion-implanted (Ba, Sr)TiO3 thin films

2014 ◽  
Vol 104 (12) ◽  
pp. 122902 ◽  
Author(s):  
Y. H. Gao ◽  
J. Yang ◽  
H. Shen ◽  
J. L. Sun ◽  
X. J. Meng ◽  
...  
Keyword(s):  
Thin Films ◽  
Nitrogen Ion ◽  
Ion Implanted

Dependence of deep-level parameters in ion-implanted GaAs MESFET's on material preparation

1986 ◽  
Vol 33 (1) ◽  
pp. 111-118 ◽  
Author(s):  
S. Dhar ◽  
P.K. Bhattacharya ◽  
Feng-Yuh Juang ◽  
Won-Pyo Hong ◽  
R.A. Sadler
Keyword(s):  
Deep Level ◽  
Material Preparation ◽  
Ion Implanted
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