Atomic chlorine concentration measurements in a plasma etching reactor. II. A simple predictive model

1987 ◽  
Vol 62 (3) ◽  
pp. 799-807 ◽  
Author(s):  
Albert D. Richards ◽  
Herbert H. Sawin
Keyword(s):  
Predictive Model ◽  
Plasma Etching ◽  
Chlorine Concentration ◽  
Concentration Measurements ◽  
Atomic Chlorine

Atomic chlorine concentration and gas temperature measurements in a plasma etching reactor

1987 ◽  
Vol 61 (1) ◽  
pp. 142-148 ◽  
Author(s):  
J. Wormhoudt ◽  
A. C. Stanton ◽  
A. D. Richards ◽  
H. H. Sawin
Keyword(s):  
Plasma Etching ◽  
Chlorine Concentration ◽  
Temperature Measurements ◽  
Gas Temperature ◽  
Atomic Chlorine

Measurement and Modeling of Atomic Chlorine Concentrations in Plasma Processes

1988 ◽  
Vol 117 ◽  
Author(s):  
Jean-Philippe Nicolai ◽  
Kenneth D. Allen ◽  
Herbert H. Sawin
Keyword(s):  
Plasma Etching ◽  
Ground State ◽  
Surface Recombination ◽  
Gaseous Diffusion ◽  
Rf Plasmas ◽  
Two Photon ◽  
Spatially Resolved ◽  
Model Predictions ◽  
Atomic Chlorine ◽  
Order Surface

AbstractSpatially resolved concentration profiles of ground-state chlorine atoms were measured in CF3 Cl/Ar RF plasmas using two-photon laser induced fluorescence. A significant Cl gradient was found between the two electrodes under conditions typical for plasma etching. This experimental observation is consistent with previous model predictions which assumed the primary loss of Cl was a second-order surface recombination on the upper electrode which is partially limited by gaseous diffusion.

scholarly journals Apatite Chlorine Concentration Measurements by LA-ICP-MS

2013 ◽  
Vol 38 (1) ◽  
pp. 23-35 ◽  
Author(s):  
David M. Chew ◽  
Ray A. Donelick ◽  
Margaret B. Donelick ◽  
Balz S. Kamber ◽  
Michael J. Stock
Keyword(s):  
Chlorine Concentration ◽  
Icp Ms ◽  
Concentration Measurements

Concentration Measurements of Chlorine Atoms in A Plasma Reactor

1986 ◽  
Vol 68 ◽  
Author(s):  
Joda Wormhoudt ◽  
Alan C. Stanton ◽  
Albert D. Richards ◽  
Herbert H. Sawin
Keyword(s):  
Plasma Etching ◽  
Infrared Absorption ◽  
Ground State ◽  
Parallel Plate ◽  
Flow System ◽  
Plasma Reactor ◽  
Line Strength ◽  
Hyperfine Component ◽  
Pressure Discharge ◽  
Atomic Chlorine

AbstractInfrared absorption spectroscopy has been used to measure atomic chlorine concentrations over a range of plasma conditions in both Cl2 and CF3Cl discharges.These measurements were made utilizing the spin-orbit transitions in the ground state of atomic chlorine near 882 cm−1.The concentration studies were performed by passing light from a diode laser through a multi-pass (White) cell set in two opposed windows of a parallel plate plasma etching reactor.The plasma work was preceded by a laboratory measurement of the infrared absorption line strengths of the 2P1/2 ← 2P3/2 transition.This measurement was done in a known concentration of atomic chlorine produced in a low pressure discharge flow system by the reaction of Cl2 or HCl with excess fluorine atoms.These measurements resulted in an integrated line strength of 4.14 (±0.89) × 10−21 cm2-molecule−1-cm−1 for the strongest hyperfine component of the transition at 882.3626 cm−1.Measured atomic chlorine concentrations in Cl2 discharges varied between 0.2 and 8.0 × 1014 atoms/cm3, representing atomic chlorine fractions on the order of a few percent.The measured atomic chlorine concentrations increased approximately linearly with increasing power and pressure, and increased with increasing frequency above approximately 1 MHz.Below 1 MHz, the atomic chlorine concentration was relatively independent of frequency.

Estimating and controlling atomic chlorine concentration via actinometry

1999 ◽  
Vol 12 (3) ◽  
pp. 323-331 ◽  
Author(s):  
C.K. Hanish ◽  
J.W. Grizzle ◽  
F.L. Teny
Keyword(s):  
Chlorine Concentration ◽  
Atomic Chlorine

Using the secondary electrons (SE) of SEM with NIST‘s MONSEL-II program to obtain improved linewidth measurements and slope angles of line edges on a MMIC GaAs device

1996 ◽  
Vol 54 ◽  
pp. 944-945
Author(s):  
Richard G. Sartore
Keyword(s):  
Integrated Circuits ◽  
Plasma Etching ◽  
Microwave Integrated Circuits ◽  
Monolithic Microwave Integrated Circuits ◽  
Thick Gold ◽  
Gaas Devices ◽  
Source Distance ◽  
Margin Of Error ◽  
Dimensional Measurements ◽  
Barrier Metal

In the evaluation of GaAs devices from the MMIC (Monolithic Microwave Integrated Circuits) program for Army applications, there was a requirement to obtain accurate linewidth measurements on the nominal 0.5 micrometer gate lengths used to fabricate these devices. Preliminary measurements indicated a significant variation (typically 10 % to 30% but could be more) in the critical dimensional measurements of the gate length, gate to source distance and gate to drain distance. Passivation introduced a margin of error, which was removed by plasma etching. Additionally, the high aspect ratio (4-5) of the thick gold (Au) conductors also introduced measurement difficulties. The final measurements were performed after the thick gold conductor was removed and only the barrier metal remained, which was approximately 250 nanometer thick platinum on GaAs substrate. The thickness was measured using the penetration voltage method. Linescan of the secondary electron signal as it scans across the gate is shown in Figure 1.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

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