Atomic chlorine concentration measurements in a plasma etching reactor. I. A comparison of infrared absorption and optical emission actinometry

1987 ◽  
Vol 62 (3) ◽  
pp. 792-798 ◽  
Author(s):  
Albert D. Richards ◽  
Brian E. Thompson ◽  
Kenneth D. Allen ◽  
Herbert H. Sawin
Keyword(s):  
Plasma Etching ◽  
Infrared Absorption ◽  
Optical Emission ◽  
Chlorine Concentration ◽  
Concentration Measurements ◽  
Atomic Chlorine

Concentration Measurements of Chlorine Atoms in A Plasma Reactor

1986 ◽  
Vol 68 ◽  
Author(s):  
Joda Wormhoudt ◽  
Alan C. Stanton ◽  
Albert D. Richards ◽  
Herbert H. Sawin
Keyword(s):  
Plasma Etching ◽  
Infrared Absorption ◽  
Ground State ◽  
Parallel Plate ◽  
Flow System ◽  
Plasma Reactor ◽  
Line Strength ◽  
Hyperfine Component ◽  
Pressure Discharge ◽  
Atomic Chlorine

AbstractInfrared absorption spectroscopy has been used to measure atomic chlorine concentrations over a range of plasma conditions in both Cl2 and CF3Cl discharges.These measurements were made utilizing the spin-orbit transitions in the ground state of atomic chlorine near 882 cm−1.The concentration studies were performed by passing light from a diode laser through a multi-pass (White) cell set in two opposed windows of a parallel plate plasma etching reactor.The plasma work was preceded by a laboratory measurement of the infrared absorption line strengths of the 2P1/2 ← 2P3/2 transition.This measurement was done in a known concentration of atomic chlorine produced in a low pressure discharge flow system by the reaction of Cl2 or HCl with excess fluorine atoms.These measurements resulted in an integrated line strength of 4.14 (±0.89) × 10−21 cm2-molecule−1-cm−1 for the strongest hyperfine component of the transition at 882.3626 cm−1.Measured atomic chlorine concentrations in Cl2 discharges varied between 0.2 and 8.0 × 1014 atoms/cm3, representing atomic chlorine fractions on the order of a few percent.The measured atomic chlorine concentrations increased approximately linearly with increasing power and pressure, and increased with increasing frequency above approximately 1 MHz.Below 1 MHz, the atomic chlorine concentration was relatively independent of frequency.

Atomic chlorine concentration and gas temperature measurements in a plasma etching reactor

1987 ◽  
Vol 61 (1) ◽  
pp. 142-148 ◽  
Author(s):  
J. Wormhoudt ◽  
A. C. Stanton ◽  
A. D. Richards ◽  
H. H. Sawin
Keyword(s):  
Plasma Etching ◽  
Chlorine Concentration ◽  
Temperature Measurements ◽  
Gas Temperature ◽  
Atomic Chlorine

scholarly journals The Use of Ion Milling for Surface Preparation for EBSD Analysis

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 3970
Author(s):  
Wojciech J. Nowak
Keyword(s):  
Plasma Etching ◽  
Ion Beam ◽  
Metallic Matrix ◽  
Surface Preparation ◽  
Optical Emission ◽  
Alternative Methods ◽  
Ebsd Analysis ◽  
Crystallographic Structure ◽  
Ion Milling ◽  
Electron Backscattered Diffraction

An electron backscattered diffraction (EBSD) method provides information about the crystallographic structure of materials. However, a surface subjected to analysis needs to be well-prepared. This usually requires following a time-consuming procedure of mechanical polishing. The alternative methods of surface preparation for EBSD are performed via electropolishing or focus ion beam (FIB). In the present study, plasma etching using a glow discharge optical emission spectrometer (GD-OES) was applied for surface preparation for EBSD analysis. The obtained results revealed that plasma etching through GD-OES can be successfully used for surface preparation for EBSD analysis. However, it was also found that the plasma etching is sensitive for the alloy microstructure, i.e., the presence of intermetallic phases and precipitates such as carbides possess a different sputtering rate, resulting in non-uniform plasma etching. Preparation of the cross-section of oxidized CM247 revealed a similar problem with non-uniformity of plasma etching. The carbides and oxide scale possess a lower sputtering rate than the metallic matrix, which caused formation of relief. Based on obtained results, possible resolutions to suppress the effect of different sputtering rates are proposed.

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