Effects of annealing on lifetime and deep‐level photoluminescence in semi‐insulating gallium arsenide

1987 ◽  
Vol 62 (7) ◽  
pp. 2946-2949 ◽  
Author(s):  
N. M. Haegel ◽  
A. Winnacker ◽  
K. Leo ◽  
W. W. Rühle ◽  
S. Gisdakis
Keyword(s):  
Gallium Arsenide ◽  
Deep Level

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

Point Defects in Gallium Arsenide Characterized by Positron Annihilation Spectroscopy and Deep Level Transient Spectroscopy

1994 ◽  
Vol 373 ◽  
Author(s):  
R. Mih ◽  
R. Gronsky
Keyword(s):  
Gallium Arsenide ◽  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Czochralski Method ◽  
Positron Annihilation Spectroscopy ◽  
Crystallographic Data ◽  
Electrical Measurements ◽  
Vacancy Defects ◽  
Transient Spectroscopy

AbstractPositron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. We present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot- Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data.

Epitaxial growth of gallium arsenide prepared by low-pressure metal-organic chemical vapour deposition at low temperatures

1992 ◽  
Vol 70 (10-11) ◽  
pp. 893-897
Author(s):  
C. Aktik ◽  
J. Beerens ◽  
S. Blain ◽  
A. Bsiesy
Keyword(s):  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Deep Level ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Organic Chemical ◽  
Carbon Incorporation ◽  
Metal Organic

The low-pressure metal-organic chemical vapour deposition (LPMOCVD) technique has been investigated previously as a growth method for compound semiconductors, offering the possibility of selective epitaxy and the potential advantage of better controllability for changing the doping level and the alloy composition. Low-temperature growth is also desirable to reduce the carbon incorporation generated by the decomposition of the organic radicals. In this article we report for the first time the epitaxial growth of gallium arsenide (GaAs) by LPMOCVD at temperatures as low as 510 °C. The vertical reactor that was developed by the authors employs conventional precursors such as trimethylgallium and arsine. By carefully choosing the growth parameters, we were able to grow high-quality GaAs epilayers with good surface morphology at temperatures as low as 510 °C. The carbon incorporation is shown to decrease with decreasing growth temperature without deterioration of the film quality. By carefully controlling the purity of the sources and the gas flow dynamics, we reduced the deep level impurity concentration and obtained reproducible n-type material with residual net donor concentration of 4.4 × 1014 cm−3 and mobility of 92 000 cm2 V−1 s−1 at 77 K.

Sign in / Sign up

Export Citation Format

Share Document