Characterization of Si‐SiO2interface traps inp‐metal‐oxide‐semiconductor structures with thin oxides by conductance technique

1987 ◽  
Vol 62 (10) ◽  
pp. 4204-4211 ◽  
Author(s):  
K. K. Hung ◽  
Y. C. Cheng
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Conductance Technique

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures

Characterization of Surface Plasmons on Metal-oxide-semiconductor Structures

1991 ◽  
Vol 38 (8) ◽  
pp. 1593-1598 ◽  
Author(s):  
I.R. Tamm ◽  
P. Dawson ◽  
M.P. Connolly ◽  
S.H. Raza ◽  
H.S. Gamble
Keyword(s):  
Metal Oxide ◽  
Surface Plasmons ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures

Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures

2013 ◽  
Vol 109 ◽  
pp. 10-12 ◽  
Author(s):  
Sung-Bum Bae ◽  
Ki-Won Kim ◽  
Yong Soo Lee ◽  
Jung-Hee Lee ◽  
Youngho Bae ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Capacitance Voltage
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