scholarly journals Effect of surface passivation on generation and recombination lifetimes in silicon wafer studied by impedance spectroscopy

2010 ◽  
Vol 96 (16) ◽  
pp. 162109 ◽  
Author(s):  
Sanjai Kumar ◽  
P. K. Singh ◽  
S. R. Dhariwal
Keyword(s):  
Impedance Spectroscopy ◽  
Silicon Wafer ◽  
Surface Passivation ◽  
Recombination Lifetimes ◽  
Effect Of Surface

ZnO Nanoparticles, Nanorods, Hexagonal Plates and Nanosheets Produced by Polyol Route and the Effect of Surface Passivation by Acetate Molecules on Optical Properties

2019 ◽  
Vol 48 (10) ◽  
pp. 6437-6445
Author(s):  
Eduardo F. Barbosa ◽  
Jaqueline A. Coelho ◽  
Edna R. Spada ◽  
Daniel R. B. Amorim ◽  
Livia M. C. Souza ◽  
...  
Keyword(s):  
Optical Properties ◽  
Zno Nanoparticles ◽  
Surface Passivation ◽  
Effect Of Surface

Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes

2017 ◽  
Vol 71 (10) ◽  
pp. 707-710 ◽  
Author(s):  
In Ho Kang ◽  
Moon Kyong Na ◽  
Ogyun Seok ◽  
Jeong Hyun Moon ◽  
H. W. Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Surface Passivation ◽  
Schottky Barrier Diodes ◽  
Effect Of Surface

Effect of Surface Cleaning on Laser Texturing of Multicrystalline Silicon Wafer

2018 ◽  
Vol 10 (5) ◽  
pp. 690-693
Author(s):  
Hee Soo Kim ◽  
Seung Hyun Ha ◽  
Sang Joon Park ◽  
Ji Hyeon Kim
Keyword(s):  
Silicon Wafer ◽  
Surface Cleaning ◽  
Multicrystalline Silicon ◽  
Laser Texturing ◽  
Effect Of Surface

Effect of surface passivation on optical and electronic properties of ultrathin silicon nanosheets

2012 ◽  
Vol 55 (6) ◽  
pp. 1469-1474 ◽  
Author(s):  
Le Wang ◽  
Ke Wu ◽  
QianMin Dong ◽  
XiaoYan Li ◽  
SiYu Xiong ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Surface Passivation ◽  
Optical And Electronic Properties ◽  
Effect Of Surface

EFFECT OF SURFACE PASSIVATION ON CAPACITANCE–VOLTAGE CHARACTERISTICS OF Sn/p-Si SCHOTTKY CONTACTS

2011 ◽  
Vol 25 (04) ◽  
pp. 531-542
Author(s):  
CABİR TEMİRCİ ◽  
BAHRI BATI
Keyword(s):  
Chemical Treatment ◽  
Room Temperature ◽  
Surface Passivation ◽  
Anodic Oxide ◽  
Treatment Method ◽  
Schottky Contacts ◽  
Metal Insulator ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Effect Of Surface

We have fabricated the Sn/p-Si Schottky barrier diodes with the interfacial layer metal–insulator–semiconductor (D-MIS) and the surface passivation metal–semiconductor MS (D-MS) by the anodization or chemical treatment method. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the devices were measured at room temperature. We obtained that the excess capacitance (C0) value of the MIS Sn/p-Si diode with the anodic oxide layer of 16.88 pF and 0.12 pF for the MS Sn/p-Si ideal diode with the surface passivation by the anodization or chemical treatment method from reverse bias C–V characteristics. Thus, we have succeeded to diminish the excess capacitance value to the limit of 0.12 pF for the MS Sn/p-Si diode by using the anodization or chemical treatment method.

Temperature dependence of surface photovoltage of bulk semiconductors and the effect of surface passivation

2000 ◽  
Vol 77 (26) ◽  
pp. 4383-4385 ◽  
Author(s):  
Shouvik Datta ◽  
M. R. Gokhale ◽  
A. P. Shah ◽  
B. M. Arora ◽  
Shailendra Kumar
Keyword(s):  
Temperature Dependence ◽  
Surface Passivation ◽  
Surface Photovoltage ◽  
Bulk Semiconductors ◽  
Effect Of Surface

Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs

2015 ◽  
Vol 653 ◽  
pp. 624-628 ◽  
Author(s):  
Fikria Jabli ◽  
Mohamed Ali Zaidi ◽  
Nawfel Ben Hamadi ◽  
S. Althoyaib ◽  
Malek Gassoumi
Keyword(s):  
Surface Passivation ◽  
Deep Levels ◽  
Effect Of Surface
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