Temperature dependence of surface photovoltage of bulk semiconductors and the effect of surface passivation

2000 ◽  
Vol 77 (26) ◽  
pp. 4383-4385 ◽  
Author(s):  
Shouvik Datta ◽  
M. R. Gokhale ◽  
A. P. Shah ◽  
B. M. Arora ◽  
Shailendra Kumar
Keyword(s):  
Temperature Dependence ◽  
Surface Passivation ◽  
Surface Photovoltage ◽  
Bulk Semiconductors ◽  
Effect Of Surface

ZnO Nanoparticles, Nanorods, Hexagonal Plates and Nanosheets Produced by Polyol Route and the Effect of Surface Passivation by Acetate Molecules on Optical Properties

2019 ◽  
Vol 48 (10) ◽  
pp. 6437-6445
Author(s):  
Eduardo F. Barbosa ◽  
Jaqueline A. Coelho ◽  
Edna R. Spada ◽  
Daniel R. B. Amorim ◽  
Livia M. C. Souza ◽  
...  
Keyword(s):  
Optical Properties ◽  
Zno Nanoparticles ◽  
Surface Passivation ◽  
Effect Of Surface

Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes

2017 ◽  
Vol 71 (10) ◽  
pp. 707-710 ◽  
Author(s):  
In Ho Kang ◽  
Moon Kyong Na ◽  
Ogyun Seok ◽  
Jeong Hyun Moon ◽  
H. W. Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Surface Passivation ◽  
Schottky Barrier Diodes ◽  
Effect Of Surface

Luminescence in Si/Strained Si1−xGex Heterostructures

1995 ◽  
Vol 379 ◽  
Author(s):  
J.C. Sturm ◽  
A. St. Amour ◽  
Y. Lacroix ◽  
M.L.W. Thewalt
Keyword(s):  
Temperature Dependence ◽  
Room Temperature ◽  
Surface Passivation ◽  
Band Edge ◽  
Strained Si ◽  
Edge Luminescence ◽  
Recent Developments ◽  
High Pump ◽  
Band Edge Luminescence ◽  
First Time

ABSTRACTThis paper quickly reviews the structure of band-edge luminescence in Si/strained Si1−xGex heterostructures, and then focusses on two recent developments -- the origin of “deep” sub-bandgap luminescence which is sometimes observed in structures grown by Molecular Beam Epitaxy (MBE) and the understanding of the temperature dependence of the band-edge luminescence (up to room temperature). Strong evidence will be presented that the origin of the deep luminescence is radiation damage, and that generated defects are segregated or trapped in the SilxGex layers. The modelling of the temperature dependence by twocarrier numerical simulation is presented for the first time. The work and experimental data show convincingly that the strength of the luminescence at high temperature is controlled by recombination at the top silicon surface, which in turn can be controlled by surface passivation. At high pump powers and low temperatures, Auger recombination reduces the lifetime in the Si1−xGex layers, and leads to a luminescence vs. temperature which is flat up to 250 K and which is reduced only by a factor of three at room temperature.

Effect of surface passivation on optical and electronic properties of ultrathin silicon nanosheets

2012 ◽  
Vol 55 (6) ◽  
pp. 1469-1474 ◽  
Author(s):  
Le Wang ◽  
Ke Wu ◽  
QianMin Dong ◽  
XiaoYan Li ◽  
SiYu Xiong ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Surface Passivation ◽  
Optical And Electronic Properties ◽  
Effect Of Surface

EFFECT OF SURFACE PASSIVATION ON CAPACITANCE–VOLTAGE CHARACTERISTICS OF Sn/p-Si SCHOTTKY CONTACTS

2011 ◽  
Vol 25 (04) ◽  
pp. 531-542
Author(s):  
CABİR TEMİRCİ ◽  
BAHRI BATI
Keyword(s):  
Chemical Treatment ◽  
Room Temperature ◽  
Surface Passivation ◽  
Anodic Oxide ◽  
Treatment Method ◽  
Schottky Contacts ◽  
Metal Insulator ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Effect Of Surface

We have fabricated the Sn/p-Si Schottky barrier diodes with the interfacial layer metal–insulator–semiconductor (D-MIS) and the surface passivation metal–semiconductor MS (D-MS) by the anodization or chemical treatment method. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the devices were measured at room temperature. We obtained that the excess capacitance (C0) value of the MIS Sn/p-Si diode with the anodic oxide layer of 16.88 pF and 0.12 pF for the MS Sn/p-Si ideal diode with the surface passivation by the anodization or chemical treatment method from reverse bias C–V characteristics. Thus, we have succeeded to diminish the excess capacitance value to the limit of 0.12 pF for the MS Sn/p-Si diode by using the anodization or chemical treatment method.

Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs

2015 ◽  
Vol 653 ◽  
pp. 624-628 ◽  
Author(s):  
Fikria Jabli ◽  
Mohamed Ali Zaidi ◽  
Nawfel Ben Hamadi ◽  
S. Althoyaib ◽  
Malek Gassoumi
Keyword(s):  
Surface Passivation ◽  
Deep Levels ◽  
Effect Of Surface

The effect of surface passivation on the structure of sulphur-rich PbS colloidal quantum dots for photovoltaic application

Nanoscale ◽  
2015 ◽  
Vol 7 (13) ◽  
pp. 5706-5711 ◽  
Author(s):  
Victor Malgras ◽  
Andrew Nattestad ◽  
Yusuke Yamauchi ◽  
Shi Xue Dou ◽  
Jung Ho Kim
Keyword(s):  
Quantum Dots ◽  
Structural Study ◽  
Surface Passivation ◽  
Colloidal Quantum Dots ◽  
Atmospheric Conditions ◽  
Photovoltaic Application ◽  
Pbs Quantum Dots ◽  
Effect Of Surface

In-depth structural study of methanol treated S-rich PbS quantum dots undergoing hydroxylation under atmospheric conditions.

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