Transparent carbon film prepared by mass‐separated negative‐carbon‐ion‐beam deposition

1987 ◽  
Vol 61 (7) ◽  
pp. 2509-2515 ◽  
Author(s):  
Junzo Ishikawa ◽  
Yasuhiko Takeiri ◽  
Kiyoshi Ogawa ◽  
Toshinori Takagi
Keyword(s):  
Ion Beam ◽  
Carbon Film ◽  
Carbon Ion ◽  
Ion Beam Deposition ◽  
Carbon Ion Beam ◽  
Beam Deposition

MP-B5 facet passivation of (AlGa)As DH lasers by carbon ion-beam deposition

1978 ◽  
Vol 25 (11) ◽  
pp. 1343-1343
Author(s):  
T. Furuse ◽  
T. Suzuki ◽  
S. Matsumoto ◽  
K. Nishida ◽  
Y. Nannichi
Keyword(s):  
Ion Beam ◽  
Carbon Ion ◽  
Ion Beam Deposition ◽  
Carbon Ion Beam ◽  
Beam Deposition

Carbon transport in Si(001) and nucleation of diamond-like carbon layers during mass selected carbon ion beam deposition

1998 ◽  
Vol 7 (1) ◽  
pp. 15-22 ◽  
Author(s):  
S. Christiansen ◽  
M. Albrecht ◽  
G. Frank ◽  
H.P. Strunk ◽  
C. Ronning ◽  
...  
Keyword(s):  
Ion Beam ◽  
Diamond Like Carbon ◽  
Carbon Ion ◽  
Ion Beam Deposition ◽  
Carbon Ion Beam ◽  
Beam Deposition ◽  
Carbon Transport

Oriented Graphitic Carbon Film Grown by Mass-Selected Ion Beam Deposition at Elevated Temperatures

1999 ◽  
Vol 593 ◽  
Author(s):  
J. Kulik ◽  
G. Lempert ◽  
E. Grossman ◽  
Y. Lifshitz
Keyword(s):  
Elevated Temperatures ◽  
Ion Beam ◽  
Ambient Pressure ◽  
Carbon Film ◽  
Bragg Diffraction ◽  
Biaxial Stress ◽  
Layer Spacing ◽  
Ion Beam Deposition ◽  
Graphitic Layer ◽  
Beam Deposition

ABSTRACTMass-selected ion-beam deposition using 120 eV C+ ions has been used to grow a carbon film on a Si substrate held at 200° C. The structure of the film has been characterized by transmission electron microscopy and electron energy loss spectroscopy. The film is graphitic and highly oriented with the c-axis lying parallel to the substrate. Moreover, the film is under significant biaxial stress such that the graphitic layer spacing is reduced by 4% from that of ambient pressure graphite. This oriented structure evolves due to the mobility of the carbon atoms at 200 °C. The material is sufficiently crystalline on the nanometer scale so as to produce Bragg diffraction discs in a convergent beam electron diffraction pattern using a 2.5 nm probe.

Ion Beam Deposition of Diamond-Like Coatings

1988 ◽  
Vol 128 ◽  
Author(s):  
Anton C. Greenwald ◽  
James K. Hirvonen ◽  
Narendra K. Jaggi
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Silicon Wafers ◽  
High Current ◽  
Carbon Ion ◽  
Ion Beam Deposition ◽  
Beam Deposition

ABSTRACTMass analyzed and non-mass analyzed carbon ion beams were used to deposit coatings on polished silicon wafers. Extremely, hard dense coatings that are structurally similar to i-carbon as determined by Ramon spectroscopy were achieved with high current beams of methane and argon. Residual contaminants of oxygen and nitrogen were minimized.

Synthesis of nanocrystalline diamond by the direct ion beam deposition method

1999 ◽  
Vol 14 (8) ◽  
pp. 3204-3207 ◽  
Author(s):  
X. S. Sun ◽  
N. Wang ◽  
W. J. Zhang ◽  
H. K. Woo ◽  
X. D. Han ◽  
...  
Keyword(s):  
Ion Beam ◽  
Carbon Film ◽  
Ion Source ◽  
Nanocrystalline Diamond ◽  
Hydrogen Ions ◽  
Random Orientation ◽  
Ion Beam Deposition ◽  
Diamond Particles ◽  
Transmission Electron ◽  
Beam Deposition

Nanocrystalline diamond has been synthesized on a mirror-polished Si(001) substrate by means of direct ion beam deposition. Low-energy (80–200 eV) hydrocarbon and hydrogen ions, generated in a Kaufman ion source, were used to bombard the substrates. The bombarded samples were characterized by high-resolution transmission electron microscopy and Raman spectroscopy. Nanocrystalline diamond particles of random orientation were observed in a matrix of amorphous carbon film on the Si(001) substrate. The size of the nanocrystalline diamond particles varied in the range of 50–300 Å. The mechanism of ion-induced formation of nanocrystalline diamond is discussed.

Quantitative Analysis of Chemically-Enhanced Sputtering during Ion Beam Deposition of Carbon Nitride Thin Films

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Hofsäss ◽  
C. Ronning ◽  
H. Feldermann ◽  
M. Sebastian
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Carbon Film ◽  
Protective Layer ◽  
Ion Energy ◽  
Protective Layers ◽  
Ion Beam Deposition ◽  
Preferential Loss ◽  
Beam Deposition

AbstractThe sputter losses during growth of carbon nitride thin films using mass selected ion beam deposition of C+ and N+ ions with energies between 20 eV and 500 eV are studied. Depending on the ion energy 35 – 100 % of C+ but only 3 – 35 % of N+ ions are incorporated in the films. Thus the films are always strongly nitrogen-deficient. To suppress the preferential loss of nitrogen we introduce the concept of continuously growing surface protective layers. Starting from a diamond-like carbon film as substrate, carbon nitride films are deposited using 100 eV 12C+ and 1 keV 14N+ ions, so that the growing films are always covered with a 1–2 rm thick protective layer of amorphous carbon. In this case we observe an increased nitrogen incorporation yielding to films with average film composition of C2N.

Sign in / Sign up

Export Citation Format

Share Document