Ion Beam Deposition of Diamond-Like Coatings

1988 ◽  
Vol 128 ◽  
Author(s):  
Anton C. Greenwald ◽  
James K. Hirvonen ◽  
Narendra K. Jaggi

ABSTRACTMass analyzed and non-mass analyzed carbon ion beams were used to deposit coatings on polished silicon wafers. Extremely, hard dense coatings that are structurally similar to i-carbon as determined by Ramon spectroscopy were achieved with high current beams of methane and argon. Residual contaminants of oxygen and nitrogen were minimized.

Author(s):  
Osamu Tsukakoshi ◽  
Saburo Shimizu ◽  
Seiji Ogata ◽  
Naruyasu Sasaki ◽  
Hiroyuki Yamakawa

1989 ◽  
Vol 162 ◽  
Author(s):  
K. L. More ◽  
S. P. Withrow ◽  
T. E. Haynes ◽  
R. A. Zuhr

ABSTRACTThin films of β SiC have been grown epitaxically onto on axis (0001) 6H α SiC substrates using ion beam deposition. The ion beam deposition technique involves the direct deposition of alternating layers of 13C+ and 30Si+. The carbon and silicon ions were obtained from an ion implanter by decelerating mass analyzed ion beams to 40 eV. The SiC substrate was held at ∼973 K. Thin films of α-SiC (a mixture of α- polytypes) were obtained following deposition onto off axis (∼2°) 6H α-SiC. High resolution electron microscopy and Rutherford backscattering techniques were used to determine the structure and crystalline perfection of the resulting layers.


1978 ◽  
Vol 25 (11) ◽  
pp. 1343-1343
Author(s):  
T. Furuse ◽  
T. Suzuki ◽  
S. Matsumoto ◽  
K. Nishida ◽  
Y. Nannichi

1998 ◽  
Vol 7 (1) ◽  
pp. 15-22 ◽  
Author(s):  
S. Christiansen ◽  
M. Albrecht ◽  
G. Frank ◽  
H.P. Strunk ◽  
C. Ronning ◽  
...  

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