Oriented Graphitic Carbon Film Grown by Mass-Selected Ion Beam Deposition at Elevated Temperatures

1999 ◽  
Vol 593 ◽  
Author(s):  
J. Kulik ◽  
G. Lempert ◽  
E. Grossman ◽  
Y. Lifshitz
Keyword(s):  
Elevated Temperatures ◽  
Ion Beam ◽  
Ambient Pressure ◽  
Carbon Film ◽  
Bragg Diffraction ◽  
Biaxial Stress ◽  
Layer Spacing ◽  
Ion Beam Deposition ◽  
Graphitic Layer ◽  
Beam Deposition

ABSTRACTMass-selected ion-beam deposition using 120 eV C+ ions has been used to grow a carbon film on a Si substrate held at 200° C. The structure of the film has been characterized by transmission electron microscopy and electron energy loss spectroscopy. The film is graphitic and highly oriented with the c-axis lying parallel to the substrate. Moreover, the film is under significant biaxial stress such that the graphitic layer spacing is reduced by 4% from that of ambient pressure graphite. This oriented structure evolves due to the mobility of the carbon atoms at 200 °C. The material is sufficiently crystalline on the nanometer scale so as to produce Bragg diffraction discs in a convergent beam electron diffraction pattern using a 2.5 nm probe.

Synthesis and Characterization of Nitrogen Containing Diamondlike Carbon Films made by ion Beam Deposition

1994 ◽  
Vol 349 ◽  
Author(s):  
Jeansong Shiao ◽  
Christian A. Zorman ◽  
Richard W. Hoffman
Keyword(s):  
Elevated Temperatures ◽  
Nitrogen Loss ◽  
Ion Beam ◽  
Carbon Films ◽  
Elastic Recoil ◽  
Heated Sample ◽  
Ion Beam Deposition ◽  
Detection Analysis ◽  
Diamondlike Carbon ◽  
Beam Deposition

ABSTRACTHydrogenated and nonhydrogenated nitrogen containing diamondlike carbon films (NDLC including a-C:N and a-C:N:H) were made in a dual ion beam deposition system. The asdeposited films were characterized by Raman spectroscopy, Rutherford backscattering spectroscopy (RBS) and elastic recoil detection analysis (ERD). The compositional stability of the films at temperatures up to 550°C was examined in situ by both RBS and ERD using a heated sample stage in the scattering chamber. The addition of nitrogen altered the Raman parameters when compared with conventional DLC. At elevated temperatures, the a-C:N films do not suffer nitrogen loss; however, the a-C:N:H films undergo nitrogen and hydrogen loss at 400°C.

Synthesis of nanocrystalline diamond by the direct ion beam deposition method

1999 ◽  
Vol 14 (8) ◽  
pp. 3204-3207 ◽  
Author(s):  
X. S. Sun ◽  
N. Wang ◽  
W. J. Zhang ◽  
H. K. Woo ◽  
X. D. Han ◽  
...  
Keyword(s):  
Ion Beam ◽  
Carbon Film ◽  
Ion Source ◽  
Nanocrystalline Diamond ◽  
Hydrogen Ions ◽  
Random Orientation ◽  
Ion Beam Deposition ◽  
Diamond Particles ◽  
Transmission Electron ◽  
Beam Deposition

Nanocrystalline diamond has been synthesized on a mirror-polished Si(001) substrate by means of direct ion beam deposition. Low-energy (80–200 eV) hydrocarbon and hydrogen ions, generated in a Kaufman ion source, were used to bombard the substrates. The bombarded samples were characterized by high-resolution transmission electron microscopy and Raman spectroscopy. Nanocrystalline diamond particles of random orientation were observed in a matrix of amorphous carbon film on the Si(001) substrate. The size of the nanocrystalline diamond particles varied in the range of 50–300 Å. The mechanism of ion-induced formation of nanocrystalline diamond is discussed.

Quantitative Analysis of Chemically-Enhanced Sputtering during Ion Beam Deposition of Carbon Nitride Thin Films

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Hofsäss ◽  
C. Ronning ◽  
H. Feldermann ◽  
M. Sebastian
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Carbon Film ◽  
Protective Layer ◽  
Ion Energy ◽  
Protective Layers ◽  
Ion Beam Deposition ◽  
Preferential Loss ◽  
Beam Deposition

AbstractThe sputter losses during growth of carbon nitride thin films using mass selected ion beam deposition of C+ and N+ ions with energies between 20 eV and 500 eV are studied. Depending on the ion energy 35 – 100 % of C+ but only 3 – 35 % of N+ ions are incorporated in the films. Thus the films are always strongly nitrogen-deficient. To suppress the preferential loss of nitrogen we introduce the concept of continuously growing surface protective layers. Starting from a diamond-like carbon film as substrate, carbon nitride films are deposited using 100 eV 12C+ and 1 keV 14N+ ions, so that the growing films are always covered with a 1–2 rm thick protective layer of amorphous carbon. In this case we observe an increased nitrogen incorporation yielding to films with average film composition of C2N.

Transparent carbon film prepared by mass‐separated negative‐carbon‐ion‐beam deposition

1987 ◽  
Vol 61 (7) ◽  
pp. 2509-2515 ◽  
Author(s):  
Junzo Ishikawa ◽  
Yasuhiko Takeiri ◽  
Kiyoshi Ogawa ◽  
Toshinori Takagi
Keyword(s):  
Ion Beam ◽  
Carbon Film ◽  
Carbon Ion ◽  
Ion Beam Deposition ◽  
Carbon Ion Beam ◽  
Beam Deposition

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Ion beam deposition of alumina for recording head applications

1995 ◽  
Vol 31 (6) ◽  
pp. 2694-2696 ◽  
Author(s):  
M. Tan ◽  
S.-I. Tan ◽  
Yong Shen
Keyword(s):  
Ion Beam ◽  
Recording Head ◽  
Ion Beam Deposition ◽  
Beam Deposition

Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition

2004 ◽  
Vol 85 (9) ◽  
pp. 1595-1597 ◽  
Author(s):  
Jae Kwon Kim ◽  
Kyu Man Cha ◽  
Jung Hyun Kang ◽  
Yong Kim ◽  
Jae-Yel Yi ◽  
...  
Keyword(s):  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Ion Beam Deposition ◽  
Si Nanocrystals ◽  
Selective Formation ◽  
Beam Deposition

Stress relaxation and optical characterization of TiO2 and SiO2 films grown by dual ion beam deposition

2008 ◽  
Vol 516 (23) ◽  
pp. 8604-8608 ◽  
Author(s):  
C. Bundesmann ◽  
I.-M. Eichentopf ◽  
S. Mändl ◽  
H. Neumann
Keyword(s):  
Stress Relaxation ◽  
Ion Beam ◽  
Optical Characterization ◽  
Sio2 Films ◽  
Ion Beam Deposition ◽  
Beam Deposition
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