Quantitative Analysis of Chemically-Enhanced Sputtering during Ion Beam Deposition of Carbon Nitride Thin Films

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Hofsäss ◽  
C. Ronning ◽  
H. Feldermann ◽  
M. Sebastian
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Carbon Film ◽  
Protective Layer ◽  
Ion Energy ◽  
Protective Layers ◽  
Ion Beam Deposition ◽  
Preferential Loss ◽  
Beam Deposition

AbstractThe sputter losses during growth of carbon nitride thin films using mass selected ion beam deposition of C+ and N+ ions with energies between 20 eV and 500 eV are studied. Depending on the ion energy 35 – 100 % of C+ but only 3 – 35 % of N+ ions are incorporated in the films. Thus the films are always strongly nitrogen-deficient. To suppress the preferential loss of nitrogen we introduce the concept of continuously growing surface protective layers. Starting from a diamond-like carbon film as substrate, carbon nitride films are deposited using 100 eV 12C+ and 1 keV 14N+ ions, so that the growing films are always covered with a 1–2 rm thick protective layer of amorphous carbon. In this case we observe an increased nitrogen incorporation yielding to films with average film composition of C2N.

Microstructure and Adhesion Properties of a-CN and Ti/a-CN Nanocomposite Thin Films Prepared by Hybrid Ion Beam Deposition Technique

2014 ◽  
Vol 938 ◽  
pp. 36-39
Author(s):  
P. Vijai Bharathy ◽  
Q. Yang ◽  
D. Nataraj
Keyword(s):  
Thin Films ◽  
Adhesion Strength ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Deposition Technique ◽  
Nanomechanical Properties ◽  
Ion Beam Deposition ◽  
Amorphous Carbon Nitride ◽  
Beam Deposition

Carbon based materials have attracted much for its unique surface microstructure and nanomechanical properties among researchers. In this study, the influence of microstructure on the nanomechanical properties of thin carbon based films was studied in detail. For which amorphous Carbon nitride (a-CN) and Titanium incorporated amorphous Carbon nitride (Ti/a-CN) thin films were prepared with a thickness of less than 100 nm using hybrid ion beam deposition technique. The incorporation of Ti into the a-CN matrix greatly modified the sp3/sp2 hybridized bonding ratio and it is reflected in the mechanical hardness of Ti/a-CN thin film. Most of the incorporated Ti reacts with carbon and nitrogen to form TiN and TiCN phases respectively. On the other hand, owing to the usage of energetic ion bombardment and the presence of TiN/TiCN phases in the carbon nitride matrix, the Ti/a-CN nanocomposite film shows improved adhesion strength compared to that of pure a-CN film. Overall the presence of hard metallic phase in the amorphous carbon network alters the microstructure and improves the adhesion strength of a-CN films suitable for protective coating applications.

Computer simulation of the ion beam deposition of binary thin films: Carbon nitride and boron carbide

1994 ◽  
Vol 12 (6) ◽  
pp. 3192-3199 ◽  
Author(s):  
S. S. Todorov ◽  
D. Marton ◽  
K. J. Boyd ◽  
A. H. Al‐Bayati ◽  
J. W. Rabalais
Keyword(s):  
Thin Films ◽  
Computer Simulation ◽  
Boron Carbide ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Beam Deposition

The effects of substrates on carbon nitride thin films prepared by direct dual ion beam deposition

1999 ◽  
Vol 355-356 ◽  
pp. 239-245 ◽  
Author(s):  
Deuk Yeon Lee ◽  
Yong Hwan Kim ◽  
In Kyo Kim ◽  
Hong Koo Baik
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Beam Deposition

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Charge Assisted Deposition of Polycrystalline Silicon Thin Films by Cesium Sputter Ion Beam Deposition

2004 ◽  
Vol 43 (10) ◽  
pp. 6880-6883 ◽  
Author(s):  
Deuk Yeon Lee ◽  
Yong Hwan Kim ◽  
In Kyo Kim ◽  
Dong Joon Choi ◽  
Soon Moon Jeong ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Silicon Thin Films ◽  
Beam Deposition
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