Two-photon fabrication of photonic crystals by single-beam laser holographic lithography

2010 ◽  
Vol 107 (7) ◽  
pp. 074311 ◽  
Author(s):  
Yongchun Zhong ◽  
Jianying Zhou ◽  
Kam Sing Wong
2010 ◽  
Vol 108 (7) ◽  
pp. 073113 ◽  
Author(s):  
Kris Ohlinger ◽  
Faraon Torres ◽  
Yuankun Lin ◽  
Karen Lozano ◽  
Di Xu ◽  
...  

2007 ◽  
Vol 24 (11) ◽  
pp. 3160-3163 ◽  
Author(s):  
Shen Xiao-Xia ◽  
Yu Xiao-Qiang ◽  
Yang Xiu-Lun ◽  
Cai Lv-Zhong ◽  
Wang Yu-Rong ◽  
...  

2009 ◽  
Vol 95 (22) ◽  
pp. 221113 ◽  
Author(s):  
Xingsheng Xu ◽  
Toshiki Yamada ◽  
Rieko Ueda ◽  
Akira Otomo

2021 ◽  
Author(s):  
Joon Ho Cha ◽  
Hae Woon Choi

Abstract Laser technology has many advantages in welding for the manufacture of EV battery packs. Aluminum (Al) and copper (Cu) are welded using a dual laser beam, suggesting the optimum power distribution for the core and ring beams. Due to the very high reflectance of Cu and Al exposed to near-infrared lasers, the material absorbs a very small amount of energy. Compared to single beam laser welding, dual beam welding has significantly improved surface quality by controlling surface solidification. The study focused on the quality of weld surface beads, weld properties and tensile strength by varying the output ratio of the core beam to the ring beam. Optimal conditions of Al6061 were a 700 W core beam, a 500 W ring beam and 200 mm/s of weld speed. For the C1020P, the optimum conditions were a center beam of 2500 W, a ring beam of 3000 W and a welding speed of 200 mm/s. In laser lap welding of Al-Al and Al-Cu, the bead width and the interfacial bead width of the joint increased as the output increased. The penetration depth did not change significantly, but small pores were formed at the interface of the junction. Tensile tests were performed to demonstrate the reliability of the weld zone, and computer simulations provided analysis of the heat distribution for optimal heat input conditions.


2021 ◽  
Vol 52 (9) ◽  
pp. 1552-1560 ◽  
Author(s):  
Artem S. Chebotarev ◽  
Aleksandr A. Lanin ◽  
Roman I. Raevskii ◽  
Alexander I. Kostyuk ◽  
Daria D. Smolyarova ◽  
...  

2012 ◽  
Vol 2012 (1) ◽  
pp. 000433-000439 ◽  
Author(s):  
Jeroen van Borkulo ◽  
Rene Hendriks ◽  
Peter Dijkstra

The traditional blade dicing technology has gone through an impressive evolution keeping up with quality, cost and miniaturization requirements that the semiconductor technology roadmaps introduced and specified. However, since wafer technologies have dropped below 90nm node and low k materials were introduced it became clear that blade dicing evolution came to an end and expensive hybrid solutions such as combined laser grooving processes and blade dicing technologies were required to achieve the desired product reliability. Similar situations have been seen with the ongoing trend to thinner wafer that are needed for miniaturization, 3D packaging and IC performance improvements. To achieve sufficient mechanical strength, complex dicing technologies and sequences have been introduced which do not respond to the requirements for current and near future technologies. This paper will discuss the low-k grooving process by laser pulses for IC wafers. The low-K laser grooving technology allows semiconductor manufacturers to execute the technology roadmap and continue to comply with Moore's law in an efficient manner. In specific this paper will elaborate on the comparison study made between the single beam and multi beam low-K grooving process. Together with a large IDM customer a comparison has been done to determine the results on quality, Heat Affected Zone (HAZ), productivity and yield.


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