Determination of the conduction‐band discontinuity between In0.53Ga0.47As/In0.52Al0.48As usingn+‐InGaAs/InAlAs/n−‐InGaAs capacitors

1986 ◽  
Vol 60 (5) ◽  
pp. 1709-1712 ◽  
Author(s):  
C. K. Peng ◽  
A. Ketterson ◽  
H. Morkoç ◽  
P. M. Solomon
Keyword(s):  
Conduction Band

Determination of the conduction‐band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis

1995 ◽  
Vol 66 (14) ◽  
pp. 1785-1787 ◽  
Author(s):  
Yong‐Hoon Cho ◽  
Kwan‐Shik Kim ◽  
Sang‐Wan Ryu ◽  
Sang‐Ku Kim ◽  
Byung‐Doo Choe ◽  
...  
Keyword(s):  
Conduction Band ◽  
Capacitance Voltage

Deep trap characterisation and conduction band offset determination of AI0.48In0.52As/(Ga0.7AI0.3)0.48In0.52As heterostructures

1997 ◽  
Vol 13 (11) ◽  
pp. 971-973 ◽  
Author(s):  
F. Ducroquet ◽  
G. Jacovetti ◽  
K. Rezzoug ◽  
S. Ababou ◽  
G. Guillot ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Trap ◽  
Band Offset ◽  
Conduction Band Offset

Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN

1995 ◽  
Vol 34 (Part 2, No. 9B) ◽  
pp. L1178-L1179 ◽  
Author(s):  
M. Drechsler ◽  
D. M. Hofmann ◽  
B. K. Meyer ◽  
T. Detchprohm ◽  
H. Amano ◽  
...  
Keyword(s):  
Effective Mass ◽  
Conduction Band ◽  
Electron Effective Mass ◽  
Band Electron ◽  
Conduction Band Electron

Determination of GaAs/GaAsSb heterojunction conduction band offset

2005 ◽  
Author(s):  
J.-B. Wang ◽  
S.R. Johnson ◽  
C.Z. Guo ◽  
S.A. Chaparro ◽  
J.A. Gupta ◽  
...  
Keyword(s):  
Conduction Band ◽  
Band Offset ◽  
Conduction Band Offset

Determination of Al mole fraction for null conduction band offset in In0.5Ga0.5P/AlxGa1−xAs heterojunction by photoluminescence measurement

1995 ◽  
Vol 67 (12) ◽  
pp. 1718-1720 ◽  
Author(s):  
Kwan‐Shik Kim ◽  
Yong‐Hoon Cho ◽  
Byung‐Doo Choe ◽  
Weon Guk Jeong ◽  
H. Lim
Keyword(s):  
Conduction Band ◽  
Mole Fraction ◽  
Band Offset ◽  
Conduction Band Offset
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