Determination of Al mole fraction for null conduction band offset in In0.5Ga0.5P/AlxGa1−xAs heterojunction by photoluminescence measurement

1995 ◽  
Vol 67 (12) ◽  
pp. 1718-1720 ◽  
Author(s):  
Kwan‐Shik Kim ◽  
Yong‐Hoon Cho ◽  
Byung‐Doo Choe ◽  
Weon Guk Jeong ◽  
H. Lim
Keyword(s):  
Conduction Band ◽  
Mole Fraction ◽  
Band Offset ◽  
Conduction Band Offset

Deep trap characterisation and conduction band offset determination of AI0.48In0.52As/(Ga0.7AI0.3)0.48In0.52As heterostructures

1997 ◽  
Vol 13 (11) ◽  
pp. 971-973 ◽  
Author(s):  
F. Ducroquet ◽  
G. Jacovetti ◽  
K. Rezzoug ◽  
S. Ababou ◽  
G. Guillot ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Trap ◽  
Band Offset ◽  
Conduction Band Offset

Determination of GaAs/GaAsSb heterojunction conduction band offset

2005 ◽  
Author(s):  
J.-B. Wang ◽  
S.R. Johnson ◽  
C.Z. Guo ◽  
S.A. Chaparro ◽  
J.A. Gupta ◽  
...  
Keyword(s):  
Conduction Band ◽  
Band Offset ◽  
Conduction Band Offset

Deep trap characterisation and conduction band offset determination of AI0.48In0.52As/(Ga0.7AI0.3)0.48In0.52As heterostructures

1997 ◽  
Vol 13 (11) ◽  
pp. 971-973 ◽  
Author(s):  
F. Ducroquet ◽  
G. Jacovetti ◽  
K. Rezzoug ◽  
S. Ababou ◽  
G. Guillot ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Trap ◽  
Band Offset ◽  
Conduction Band Offset

Determination of the conduction-band offset of a single AlGaAs barrier layer using DLTS

1992 ◽  
Vol 12 (2) ◽  
pp. 163-166 ◽  
Author(s):  
Q.S. Zhu ◽  
S.M. Mou ◽  
X.C. Zhou ◽  
Z.T. Zhong
Keyword(s):  
Conduction Band ◽  
Barrier Layer ◽  
Band Offset ◽  
Conduction Band Offset
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