Determination of the density of states effective mass and the energy minimum of theX7satellite conduction band in GaAs from theX6→X7absorption spectrum

1990 ◽  
Vol 57 (4) ◽  
pp. 395-397 ◽  
Author(s):  
W. B. Wang ◽  
N. Ockman ◽  
M. A. Cavicchia ◽  
R. R. Alfano
Keyword(s):  
Effective Mass ◽  
Conduction Band ◽  
Density Of States ◽  
Energy Minimum

Comprehensive study of anomalous conduction band structure of InxGa1−xAs1-−yNy

2000 ◽  
Vol 639 ◽  
Author(s):  
C. Skierbiszewski ◽  
P. Perlin ◽  
P. Wisniewski ◽  
A. Presz ◽  
T. Suski ◽  
...  
Keyword(s):  
Dispersion Relation ◽  
Effective Mass ◽  
Conduction Band ◽  
Density Of States ◽  
Energy Gap ◽  
Free Standing ◽  
Hall Effect Measurements ◽  
High Degree ◽  
Band Anticrossing

ABSTRACTUsing free standing layer of InGaAsN we have succeeded in measuring the optical absorption in very broad spectral range (0.8-2.5eV). This gave us an insight into the conduction band density of states for the energies higher than the energy gap of this compound. By combining Hall effect measurements with determination of plasma edge frequency in infrared reflectivity for differently doped samples we were able to deduce the density of states, conduction band electrons effective mass and dispersion relation. In particular it turned out that both i) experimentally measured dispersion relation of the conduction band shows extremely high degree of nonparabolicity and consistently ii) the effective mass of electrons is few times larger than that corresponding to GaAs of the same electron concentration. So far the obtained experimental results are in line with recently proposed band anticrossing model of the electronic structure of III-N-V alloys.

Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN

1995 ◽  
Vol 34 (Part 2, No. 9B) ◽  
pp. L1178-L1179 ◽  
Author(s):  
M. Drechsler ◽  
D. M. Hofmann ◽  
B. K. Meyer ◽  
T. Detchprohm ◽  
H. Amano ◽  
...  
Keyword(s):  
Effective Mass ◽  
Conduction Band ◽  
Electron Effective Mass ◽  
Band Electron ◽  
Conduction Band Electron

Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 277-280
Author(s):  
Fabian Rasinger ◽  
Gregor Pobegen ◽  
Thomas Aichinger ◽  
Heiko B. Weber ◽  
Michael Krieger
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Dielectric Relaxation ◽  
Conduction Band ◽  
Density Of States ◽  
Accurate Estimation ◽  
Device Performance ◽  
Channel Mobility ◽  
Current Voltage

Current-voltage characterization and thermal dielectric relaxation current (TDRC) measurements are carried out on 4H silicon carbide (SiC) n-channel MOSFETs processed with different post oxidation anneals (POAs) in O2, N2O, and NO atmospheres at high temperature. In all samples we observe a distinct peak at a temperature of 70 K in the TDRC spectra due to a defect close to the conduction band of 4H-SiC having a high density of states (>1013cm-2eV-1). We show that this defect is related to the degradation of the device performance such as the MOSFET conductivity. Comparing the different POAs, NO strongly reduces the density of states close to the conduction band and thus increases the amount of free channel electrons. Based on TDRC measurements we want to suggest a method for more accurate estimation of the true channel mobility accounting for the reduced channel electron density due to trapping.

Plasma Edge Reflectance Measurements in GaxIn(1−x)As and InAsxSb(1−x) Alloys

1971 ◽  
Vol 49 (15) ◽  
pp. 2052-2060 ◽  
Author(s):  
Mathew B. Thomas ◽  
John C. Woolley
Keyword(s):  
Experimental Data ◽  
Relaxation Time ◽  
Effective Mass ◽  
Conduction Band ◽  
Room Temperature ◽  
Plasma Edge ◽  
Electron Effective Mass ◽  
Reflectance Measurements ◽  
Type Conduction

Room temperature measurements of plasma reflectance have been made on polycrystalline homogeneous n type samples of GaxIn(1−x) As and InAsxSb(1−x) alloys. An analysis for the case of general degeneracy in a Kane-type conduction band has been developed, to allow the determination of electron effective mass (m0*/m) at the bottom of the conduction band. Hence values of m0*/m vs. x have been determined for both alloy systems. From the experimental data, values of relaxation time and optical mobility have also been calculated.

First-principle calculation of the electronic structure, DOS and effective mass TlInSe2

2017 ◽  
Vol 31 (14) ◽  
pp. 1750155 ◽  
Author(s):  
N. A. Ismayilova ◽  
G. S. Orudzhev ◽  
S. H. Jabarov
Keyword(s):  
Electronic Structure ◽  
Effective Mass ◽  
Valence Band ◽  
Conduction Band ◽  
Density Of States ◽  
Valence Band Maximum ◽  
First Principle ◽  
Band Maximum ◽  
Effective Masses ◽  
Structure Density

The electronic structure, density of states (DOS), effective mass are calculated for tetragonal TlInSe2 from first principle in the framework of density functional theory (DFT). The electronic structure of TlInSe2 has been investigated by Quantum Wise within GGA. The calculated band structure by Hartwigsen–Goedecker–Hutter (HGH) pseudopotentials (psp) shows both the valence band maximum and conduction band minimum located at the T point of the Brillouin zone. Valence band maximum at the T point and the surrounding parts originate mainly from 6s states of univalent Tl ions. Bottom of the conduction band is due to the contribution of 6p-states of Tl and 5s-states of In atoms. Calculated DOS effective mass for holes and electrons are [Formula: see text], [Formula: see text], respectively. Electron effective masses are fairly isotropic, while the hole effective masses show strong anisotropy. The calculated electronic structure, density of states and DOS effective masses of TlInSe2 are in good agreement with existing theoretical and experimental results.

Sign in / Sign up

Export Citation Format

Share Document