Deep‐level transient spectroscopy study of a thermal conversion layer on semi‐insulating GaAs grown by the liquid‐encapsulated Czochralski method

1986 ◽  
Vol 60 (6) ◽  
pp. 2184-2186 ◽  
Author(s):  
Y. J. Chan ◽  
M. S. Lin
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Czochralski Method ◽  
Thermal Conversion ◽  
Spectroscopy Study ◽  
Transient Spectroscopy

Deep-Level Transient Spectroscopy Study on Double Implanted N(+)-p and p(+)-n 4H-SiC Diodes

2004 ◽  
Author(s):  
Souvick Mitra ◽  
Mulpuri V. Rao ◽  
N. Papanicolaou ◽  
K. A. Jones ◽  
M. Derenge
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Transient Spectroscopy

scholarly journals Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs

1992 ◽  
Vol 82 (5) ◽  
pp. 841-844
Author(s):  
A. Babiński ◽  
J. Przybytek ◽  
M. Baj ◽  
P. Omling ◽  
L. Samuelson ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Transient Spectroscopy

A deep-level transient spectroscopy study of transition metals in n-type germanium

2006 ◽  
Vol 9 (4-5) ◽  
pp. 559-563 ◽  
Author(s):  
S. Forment ◽  
J. Vanhellemont ◽  
P. Clauws ◽  
J. Van Steenbergen ◽  
S. Sioncke ◽  
...  
Keyword(s):  
Transition Metals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Transient Spectroscopy

Point Defects in Gallium Arsenide Characterized by Positron Annihilation Spectroscopy and Deep Level Transient Spectroscopy

1994 ◽  
Vol 373 ◽  
Author(s):  
R. Mih ◽  
R. Gronsky
Keyword(s):  
Gallium Arsenide ◽  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Czochralski Method ◽  
Positron Annihilation Spectroscopy ◽  
Crystallographic Data ◽  
Electrical Measurements ◽  
Vacancy Defects ◽  
Transient Spectroscopy

AbstractPositron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. We present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot- Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data.

Deep level transient spectroscopy study of GaAs surface states treated with inorganic sulfides

1988 ◽  
Vol 53 (12) ◽  
pp. 1059-1061 ◽  
Author(s):  
D. Liu ◽  
T. Zhang ◽  
R. A. LaRue ◽  
J. S. Harris ◽  
T. W. Sigmon
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Surface States ◽  
Gaas Surface ◽  
Spectroscopy Study ◽  
Transient Spectroscopy
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