Flat band voltage (VFB) modulation by controlling compositional depth profile in La2O3/HfO2 nanolaminate gate oxide

2010 ◽  
Vol 107 (7) ◽  
pp. 074109 ◽  
Author(s):  
W. J. Maeng ◽  
Woo-Hee Kim ◽  
Hyungjun Kim
Keyword(s):  
Depth Profile ◽  
Gate Oxide ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Compositional Depth Profile

Very Low Temperature E-gun Evaporated Gate Oxide of TFTs on Plastic Substrates

2001 ◽  
Vol 685 ◽  
Author(s):  
Cheon-Hong Kim ◽  
Sang-Hoon Jung ◽  
Min-Koo Han
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Gate Oxide ◽  
High Energy ◽  
Post Treatment ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Hydrogen Atoms ◽  
Plastic Substrates ◽  
Very Low Temperature

AbstractA high-quality silicon dioxide (SiO2) suitable for a gate oxide on plastic substrates is successfully deposited by e-gun evaporation at room temperature. The e-gun evaporated oxide film is free from troublesome hydrogen atoms and high-energy ion damage, which ensures good electrical characteristics. N2O/N2 plasma post-treatment was effective to reduce the flat band voltage and leakage current of the evaporated oxides due to the passivation of high-energy nitrogen and oxygen radicals. In the SiO2 film treated by N2O/N2 plasma for 1 minute, the flat band voltage has been reduced from −2.5V to about −0.5V and the leakage current has been decreased by more than one order. Our experimental results show that very low temperature SiO2 film suitable for a gate insulator of TFTs on the plastic substrates has been successfully obtained by the e-gun evaporation and N2O/N2 plasma post-treatment.

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

Depth Profile Study of Large-Sized Coal Samples by Fourier Transform Infrared Photoacoustic Spectroscopy

1986 ◽  
Vol 40 (2) ◽  
pp. 214-217 ◽  
Author(s):  
Tiziana Zerlia
Keyword(s):  
Fourier Transform ◽  
Depth Profile ◽  
Photoacoustic Spectroscopy ◽  
Modulation Frequency ◽  
Fourier Transform Infrared ◽  
Qualitative Description ◽  
Difference Spectra ◽  
Compositional Depth Profile ◽  
Ft Ir ◽  
Infrared Photoacoustic Spectroscopy

A multidisciplinary approach is demonstrated to elucidate coal weathering at a molecular level. Fourier Transform Infrared Photoacoustic Spectroscopy (FT-IR/PAS) provides a technique for a compositional depth profile of coal by simply varying the modulation frequency (mirror velocity) of the light impinging upon the solid surface. In order that the potential of this technique in this field could be evaluated, large-sized coal samples were examined. The PA difference spectra obtained from the spectra taken at different modulation frequencies (i.e., different depths), on a sample aged in air, demonstrate the appearance of negative features in the CH infrared absorption which are indicative of a coal alteration. Therefore, different coal layers can be distinguished by FT-IR/PAS. The application of the same technique to the study of a coal sample heated in air at 200°C allows the detection of different oxidation mechanisms operating inside and outside the coal. Although quantitative results are difficult to obtain, the technique can be successfully proposed for a qualitative description of coal weathering.

scholarly journals Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Sung Heo ◽  
Hyoungsun Park ◽  
Dong-Su Ko ◽  
Yong Su Kim ◽  
Yong Koo Kyoung ◽  
...  
Keyword(s):  
Work Function ◽  
Direct Evidence ◽  
Depth Profiling ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Voltage Shift
Sign in / Sign up

Export Citation Format

Share Document