Low‐temperature grain growth of initially 〈100〉 textured polycrystalline silicon films amorphized by silicon ion implantation with normal incident angle

1986 ◽  
Vol 59 (1) ◽  
pp. 289-291 ◽  
Author(s):  
Koji Egami ◽  
Atsushi Ogura ◽  
Masakazu Kimura
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Grain Growth ◽  
Polycrystalline Silicon ◽  
Incident Angle ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Grain Growth Processes during Transient Annealing of As-Implanted, Polycrystalline-Silicon Films

1984 ◽  
Vol 35 ◽  
Author(s):  
S.J. Krause ◽  
S.R. Wilson ◽  
W.M. Paulson ◽  
R.B. Gregory
Keyword(s):  
Growth Rate ◽  
Grain Size ◽  
Grain Growth ◽  
Polycrystalline Silicon ◽  
Average Diameter ◽  
Silicon Films ◽  
Growth Processes ◽  
Cross Sectional ◽  
Polycrystalline Silicon Films ◽  
Equiaxed Grains

ABSTRACTPolycrystalline silicon films of 300 nm thickness were deposited on oxidized wafer surfaces, implanted with As, and annealed on a Varian IA 200 rapid thermal annealer. Transmission electron microscopy was used to study through-thickness and cross sectional views of grain size and morphology of as-deposited and of transient annealed films. A bimoda] distribution of grain sizes was present in as-deposited polycrystalline silicon films. The first population was due to columnar growth of some grains to a final average diameter of 20 rm. The second population of small equiaxed grains of 5 nm average diameter were formed early in the deposition process. During transient annealing grains in the first population grew rapidly up to 280-nm equiaxed grains. After this the growth rate decreased due to the grain size reaching the thickness of the film. Grains in the second population grew rapidly up to a size of 150 nm, after which the growth rate was lowered due to grains impinging upon one another. The grain growth processes for both populations have been described with a modified model for interfacially driven grain growth. This model accounts for diffusion and grain growth which occur with rapidly rising and falling temperatures during short annealing times characteristic of transient annealing processes.

scholarly journals Low Temperature Growth of Polycrystalline Silicon Films by RF Sputtering Method(1st Report).

1995 ◽  
Vol 61 (6) ◽  
pp. 829-833
Author(s):  
Hiroaki KAKIUCHI ◽  
Hideaki KAWABE ◽  
Kumayasu YOSHII ◽  
Kiyoshi YASUTAKE ◽  
Akihiro TAKEUCHI ◽  
...  
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Rf Sputtering ◽  
Silicon Films ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Polycrystalline Silicon Films
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