Raman scattering study of rapid thermal annealing of As+‐implanted Si

1985 ◽  
Vol 58 (6) ◽  
pp. 2174-2179 ◽  
Author(s):  
D. Kirillov ◽  
R. A. Powell ◽  
D. T. Hodul
Keyword(s):  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Scattering Study

Raman Scattering Study of Mixing of GaAs/AlAs Superlattices by Ion Implantation and Rapid Thermal Annealing

1986 ◽  
Vol 69 ◽  
Author(s):  
D. Kirillov ◽  
P. Ho ◽  
G. A. Davis
Keyword(s):  
Ion Implantation ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Damaged Material ◽  
Different Types ◽  
Scattering Study

AbstractRaman scattering was applied to study mixing of GaAs/AlAs superlattices. Different implantation ions and doses were used. The evolution from partially amorphous to completely amorphous and from partially mixed to completely mixed structures was observed. Rapid thermal annealing caused recrystallization of the damaged material. Different types of structures were obtained, depending on the implantation doses and species of ions. Completely mixed crystalline alloys could be obtained only for high implantation doses.

scholarly journals Influence of Rapid Thermal Annealing on Raman Scattering of InN Epilayers

2010 ◽  
Vol 49 (10) ◽  
pp. 105803
Author(s):  
Min-De Yang ◽  
Shih-Chang Tong ◽  
I-Tin Chou ◽  
Gia-Wei Shu ◽  
Ji-Lin Shen ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Effects of Rapid Thermal Anneals on Boron Implanted GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
M. H. Herman ◽  
S. E. Buttrill
Keyword(s):  
Electron Beam ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Lattice Strain ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Conventional Furnace

ABSTRACTRaman scattering, double-crystal x-ray diffraction, and electron beam electroreflectance have been used to assess the damage produced in undoped (100)-GaAs by boron ion implants and the influence of post-implant anneals. Both conventional furnace and rapid thermal annealing treatments were found to remove much of the lattice strain created by the implants. However, considerable disorder also remains after these anneals.

Characterization of Si Implantation and Annealing of InP by Raman Spectroscopy

1994 ◽  
Vol 354 ◽  
Author(s):  
L. Artus ◽  
R. Cusco ◽  
J.M. Martin ◽  
G. Gonzalez-Diaz
Keyword(s):  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Second Order ◽  
Good Recovery ◽  
Scattering Measurements ◽  
Lattice Damage

AbstractRaman scattering was used to assess the lattice damage caused by Si+ implantation in InP, as well as the lattice recovery achieved after rapid thermal annealing (RTA). Semi-insulating InP was implanted with Si+ with doses in the range of 1012 to 5xl014cm”2. Raman scattering measurements show a progressive intensity reduction of the characteristic first- and second-order InP Raman peaks and an enhancement of the disorder activated modes with increasing dose. The onset of amorphization was found to be at about 1014 cm”2. RTA of the implanted samples at 875 °C for 10s results in a very good recovery of the InP lattice even for the highest dose, as confirmed by Raman scattering measurements.

UV-Raman scattering study of lattice recovery by thermal annealing of Eu+ -implanted GaN layers

2006 ◽  
Vol 40 (4-6) ◽  
pp. 440-444 ◽  
Author(s):  
D. Pastor ◽  
S. Hernández ◽  
R. Cuscó ◽  
L. Artús ◽  
R.W. Martin ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Thermal Annealing ◽  
Uv Raman ◽  
Scattering Study
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