Effects of Rapid Thermal Anneals on Boron Implanted GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
M. H. Herman ◽  
S. E. Buttrill
Keyword(s):  
Electron Beam ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Lattice Strain ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Conventional Furnace

ABSTRACTRaman scattering, double-crystal x-ray diffraction, and electron beam electroreflectance have been used to assess the damage produced in undoped (100)-GaAs by boron ion implants and the influence of post-implant anneals. Both conventional furnace and rapid thermal annealing treatments were found to remove much of the lattice strain created by the implants. However, considerable disorder also remains after these anneals.

Effects of Helium Ion Implantation on the Optical and Crystal Properties of GaAs

1989 ◽  
Vol 147 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
J. F. Knudsen ◽  
S. C. Moss ◽  
P. A. Dafesh ◽  
...  
Keyword(s):  
Electron Beam ◽  
Raman Scattering ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
Double Crystal ◽  
Damage Behavior ◽  
X Ray ◽  
Crystal Properties ◽  
Helium Ion ◽  
Different Levels

AbstractThe damage to GaAs crystals caused by helium ion implants has been monitored by changes in the Raman scattering phonon modes, double-crystal x-ray diffraction rocking curves, photoreflectance (PR), and electron beam electroreflectance (EBER) band edge transitions. As the implanted helium ion dose was increased, the various techniques revealed threshold damage behavior at very different levels. Although PR and EBER were the most sensitive to the defects created at the lowest ion doses, all techniques indicated substantial disorder for implants greater than 1014 ions/cm2.

Rapid Thermal Annealing of Tungsten Silicide Films

1995 ◽  
Vol 402 ◽  
Author(s):  
A. Fabricius ◽  
O. Nennewitz ◽  
L. Spieβ ◽  
V. Cimalla ◽  
J. Pezoldt
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Lattice Strain ◽  
Silicon Oxide ◽  
Specific Resistance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oxide Substrates ◽  
Different Temperatures

AbstractTungsten / silicon multisandwich layers were deposited by DC magnetron sputtering on silicon and silicon oxide substrates. After the deposition the samples were annealed by rapid thermal annealing at different temperatures under H2 atmosphere. X-ray diffraction measurements were carried out to determine the crystal structure of the obtained silicide layers. To estimate the grain size and the relative lattice strain in dependence on the annealing temperature from the X-ray profile the deconvolution method of Lagrange was used. To characterize the electrical properties the specific resistance was measured by a linear four-point method. The best specific resistance measured was approximately 17 μΩcm for the sample on silicon substrate annealed at 1195 °C for 20 seconds. Rutherford Backscattering Spectroscopy measurements were carried out to obtain the stoichiometric depth profile.

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

Rapid Thermal Annealing Characteristics of Mg Doped InN by X-Ray Diffraction

2013 ◽  
Vol 40 (1) ◽  
pp. 0106003
Author(s):  
王健 Wang Jian ◽  
谢自力 Xie Zili ◽  
张韵 Zhang Yun ◽  
滕龙 Teng Long ◽  
李烨操 Li Yecao ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mg Doped

Rapid Thermal Annealing of Composite TaSi2/n+ Poly-Si Silicide Films

1983 ◽  
Vol 23 ◽  
Author(s):  
D.L. Kwong ◽  
R. Kwor ◽  
B.Y. Tsaur ◽  
K. Daneshvar
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealed Sample ◽  
Vlsi Circuits ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Transmission Electron ◽  
Average Grain Size

ABSTRACTThe formation of composite TaSi2/n+ Poly-Si silicide films through the use of rapid thermal annealing (RTA) is investigated by x-ray diffraction, four point probe, scanning Auger microprobes (SAM) with ion sputter etching, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and capacitance-voltage (C-V) measurements. 0.2 μm polysilicon is deposited on oxidized Si wafer by LPCVD and doped with phosphorus. A layer of 2200 A TaSix is then co-sputtered on polysilicon samples from separate targets. These as-deposited films are then annealed by RTA in an argon ambient for 1 sec. and 10 sec. at various temperatures. X-ray diffraction and SAM results show the rapid formation of a uniform stoichiometric tantalum disilicide via Si migration from polysilicon. TEM micrographs show simlilar results for samples annealed at 1000°C in furnace for 30 min. or by RTA for 1 sec., exhibiting average grain size greater than 1000 A. Sheet resistance of samples annealed by furnace annealing and RTA are comparable. SEM micrographs indicate that the surface morphology of the RTA-annealed sample is superior to that obtained by furnace annealing. These results show that RTA may offer a practical solution to low-resistivity silicide formation in VLSI circuits.

Doping properties of the Ion-Beam-Sputtered SiGe Film

1996 ◽  
Vol 441 ◽  
Author(s):  
Wen-Jie Qi ◽  
Zhi-Sheng Wang ◽  
Zhi-Guang Gu ◽  
Guo-Ping Ru ◽  
Guo-Bao Jialig ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Polycrystalline Structure ◽  
X Ray ◽  
Post Annealing ◽  
And Diffusion

AbstractThe ion-beam-sputtered polycrystalline SiGe film and its doping properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activate the implanted impurities, both rapid thermal annealing and fiirnace annealing have been used. The electrical measurements show that boron and plhosphorus can be doped into sputtered SiGe films and effectively activated by both ion implantation with post-annealing and diffiision. Hall mobilities as high as 31 cm2/V-s and 20 cm2/V.s have been obtained in B-difflhsed and P-diffused SiGe films, respectively. The x-ray diffraction spectra of the sputtered Sifie filhn show its typical polycrystalline structure with (111), (220) and (311) as the preferential orientations.

Direct Silicidation of Co on Si by Rapid Thermal Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
M. Tabasky ◽  
E. S. Bulat ◽  
B. M. Ditchek ◽  
M. A. Sullivan ◽  
S. Shatas
Keyword(s):  
Contact Resistance ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Cobalt Silicide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Resistivity ◽  
Dopant Redistribution

ABSTRACTRapid thermal annealing is used to form cobalt silicide directly on unimplanted as well as B, As, and P implanted wafers. The films are characterized by sheet resistance, X-ray diffraction, SEM, SIMS, and contact resistance measurements. The direct silicidation of cobalt on Si by rapid thermal annealing yields smooth, low resistivity films with minimal dopant redistribution.

Dislocation sources and slip band nucleation from indents on silicon wafers

2010 ◽  
Vol 43 (5) ◽  
pp. 1036-1039 ◽  
Author(s):  
J. Wittge ◽  
A. N. Danilewsky ◽  
D. Allen ◽  
P. McNally ◽  
Z. Li ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Slip Band ◽  
Rapid Thermal Annealing ◽  
Line Tension ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Imaging ◽  
Dislocation Sources ◽  
Nucleation Of Dislocations

The nucleation of dislocations at controlled indents in silicon during rapid thermal annealing has been studied byin situX-ray diffraction imaging (topography). Concentric loops extending over pairs of inclined {111} planes were formed, the velocities of the inclined and parallel segments being almost equal. Following loss of the screw segment from the wafer, the velocity of the inclined segments almost doubled, owing to removal of the line tension of the screw segments. The loops acted as obstacles to slip band propagation.

Lattice Strain from Holes in Heavily Doped Si:Ga

1989 ◽  
Vol 147 ◽  
Author(s):  
K. L. Kavanagh ◽  
G. S. Cargill ◽  
R. F. Boehme ◽  
J. C. P. Chang
Keyword(s):  
Experimental Error ◽  
Laser Annealing ◽  
Lattice Strain ◽  
Nearest Neighbor ◽  
X Ray Diffraction ◽  
Lattice Contraction ◽  
Double Crystal ◽  
X Ray ◽  
Heavily Doped ◽  
X Ray Absorption

AbstractHeavily doped Si:Ga has been prepared by liquid phase epitaxy (LPE) and by ionimplantation with rapid thermal annealing (RTA) or laser annealing (LA). Peak substitutional Ga concentrations obtained by each technique were 1.5, 2.5 and 2.9 ×1020cm-3, respectively. Substitutional fractions (>90%) were similar in the three types of samples, and the conductivity scaled with the total Ga concentration. A lattice expansion per substitutional Ga atom in Si of +0.9 ± 0. l×10-24cm3 /atom was measured by double crystal x-ray diffraction. The average nearest neighbor Si-Ga bond length measured with extended x-ray absorption fine structure (EXAFS) was 0.237 ± 0.004 nm, indistinguishable, to within experimental error, from the intrinsic Si-Si bond lngth, 0.235 nm. Combining these two results the lattice strain per hole in the Si valence band was calculated, +0.4 ± 0.8x10G-cm3. This result complements the lattice contraction per electron in the Si conduction band (-1.8 ± 0.4x10-24cm 3) already reported for Si:As [G. S. Cargill III, J. Angilelloand K. L. Kavanagh, Phys. Rev. Letters 61, 1748 (1988)].

Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 733-736 ◽  
Author(s):  
Sergio Ferrero ◽  
A. Albonico ◽  
Umberto M. Meotto ◽  
G. Rambolà ◽  
Samuele Porro ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ohmic Contacts ◽  
Structural Evolution ◽  
Auger Spectroscopy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Ohmic Behavior ◽  
Semiconductor Interfaces

In this work we report an analysis on Ni/4H-SiC interfaces aimed at optimizing the ohmic contacts. Several thermal cycles have been performed by rapid thermal annealing checking the possible chemical reactions at the metal semiconductor interfaces. Micro x-ray diffraction and micro Raman techniques have been performed in order to study the interface micro structural evolution. Inter diffusion of each element at the Ni - SiC interface was examined using Auger spectroscopy. Electrical measurements have been performed in order to check the ohmic behavior of the contacts. Finally, a correlation between microstructures evolution and electrical behaviors is reported.

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