UV-Raman scattering study of lattice recovery by thermal annealing of Eu+ -implanted GaN layers

2006 ◽  
Vol 40 (4-6) ◽  
pp. 440-444 ◽  
Author(s):  
D. Pastor ◽  
S. Hernández ◽  
R. Cuscó ◽  
L. Artús ◽  
R.W. Martin ◽  
...  
1986 ◽  
Vol 69 ◽  
Author(s):  
D. Kirillov ◽  
P. Ho ◽  
G. A. Davis

AbstractRaman scattering was applied to study mixing of GaAs/AlAs superlattices. Different implantation ions and doses were used. The evolution from partially amorphous to completely amorphous and from partially mixed to completely mixed structures was observed. Rapid thermal annealing caused recrystallization of the damaged material. Different types of structures were obtained, depending on the implantation doses and species of ions. Completely mixed crystalline alloys could be obtained only for high implantation doses.


Soft Matter ◽  
2016 ◽  
Vol 12 (43) ◽  
pp. 8861-8868 ◽  
Author(s):  
B. Rossi ◽  
V. Venuti ◽  
F. D'Amico ◽  
A. Gessini ◽  
A. Mele ◽  
...  

1985 ◽  
Vol 58 (6) ◽  
pp. 2174-2179 ◽  
Author(s):  
D. Kirillov ◽  
R. A. Powell ◽  
D. T. Hodul

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