MeV P ion implantation damage and rapid thermal annealing effects in Fe‐doped InP using Raman scattering

1996 ◽  
Vol 80 (4) ◽  
pp. 2127-2131 ◽  
Author(s):  
Bo‐Rong Shi ◽  
Nelson Cue ◽  
Tian‐Bing Xu ◽  
Standey Au
Keyword(s):  
Ion Implantation ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Implantation Damage ◽  
Annealing Effects

Raman Scattering Study of Mixing of GaAs/AlAs Superlattices by Ion Implantation and Rapid Thermal Annealing

1986 ◽  
Vol 69 ◽  
Author(s):  
D. Kirillov ◽  
P. Ho ◽  
G. A. Davis
Keyword(s):  
Ion Implantation ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Damaged Material ◽  
Different Types ◽  
Scattering Study

AbstractRaman scattering was applied to study mixing of GaAs/AlAs superlattices. Different implantation ions and doses were used. The evolution from partially amorphous to completely amorphous and from partially mixed to completely mixed structures was observed. Rapid thermal annealing caused recrystallization of the damaged material. Different types of structures were obtained, depending on the implantation doses and species of ions. Completely mixed crystalline alloys could be obtained only for high implantation doses.

Ion Implantation Damage and its Annealing Characteristics in an AlAs/GaAs Layer Structure

1988 ◽  
Vol 144 ◽  
Author(s):  
A. G. Cullis ◽  
D. C. Jacobson ◽  
J. M. Poate ◽  
N. G. Chew ◽  
C. R. Whitehouse ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Damage Accumulation ◽  
Strong Influence ◽  
Layer Structure ◽  
Gaas Layer ◽  
Lattice Defects ◽  
Damage State ◽  
Implantation Damage

ABSTRACTThe implantation of Ar+ ions into AlAs/GaAs layered samples is shown to give very different damage structures in the two materials. While the GaAs is relatively easily amorphised, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. The behaviour of the different damage structures when subjected to rapid thermal annealing treatments is described in some detail. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.

Rapid Thermal Annealing Effects in CdTe (111) Thin Films Grown on GaAs (100) Substrates

1996 ◽  
Vol 35 (Part 1, No. 8) ◽  
pp. 4220-4224 ◽  
Author(s):  
M. D. Kim ◽  
T. W. Kang ◽  
M. S. Han ◽  
T. W. Kim
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Effects

Rapid thermal annealing effects on blue luminescence of As-implanted GaN

2002 ◽  
Vol 92 (7) ◽  
pp. 4129-4131 ◽  
Author(s):  
H. Y. Huang ◽  
J. Q. Xiao ◽  
C. S. Ku ◽  
H. M. Chung ◽  
W. K. Chen ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Blue Luminescence ◽  
Annealing Effects

Properties of the TiSi2/p+nstructures formed by ion implantation through silicide and rapid thermal annealing

1992 ◽  
Vol 72 (1) ◽  
pp. 73-77 ◽  
Author(s):  
H. B. Erzgräber ◽  
P. Zaumseil ◽  
E. Bugiel ◽  
R. Sorge ◽  
K. Tittelbach‐Helmrich ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

scholarly journals TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing

2017 ◽  
Vol 05 (01) ◽  
pp. 15-25
Author(s):  
Junji Yamanaka ◽  
Shigenori Inoue ◽  
Keisuke Arimoto ◽  
Kiyokazu Nakagawa ◽  
Kentarou Sawano ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing
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