Two‐dimensional electron gas in In0.53Ga0.47As/InP heterojunctions grown by atmospheric pressure metalorganic chemical‐vapor deposition

1985 ◽  
Vol 58 (8) ◽  
pp. 3145-3149 ◽  
Author(s):  
L. D. Zhu ◽  
P. E. Sulewski ◽  
K. T. Chan ◽  
K. Muro ◽  
J. M. Ballantyne ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Metalorganic Chemical Vapor Deposition ◽  
Electron Gas ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas ◽  
Metalorganic Chemical

Recombination Related to Two-Dimensional Electron Gas of AlxGa1-xN/GaN Single Heterostructures Studied with Picosecond Time-Resolved Photoluminescence

2003 ◽  
Vol 798 ◽  
Author(s):  
Qing Yang ◽  
Rob Armitage ◽  
Eicke R. Weber ◽  
Ronald Birkhahn ◽  
David Gotthold ◽  
...  
Keyword(s):  
Electron Gas ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Time Resolved ◽  
Hall Effect Measurements ◽  
Dimensional Electron Gas ◽  
Time Resolved Photoluminescence

ABSTRACTNearbandgap radiative recombination in undoped AlxGa1-xN/GaN (x = 0.28 to 0.35) single heterostructures grown by metalorganic chemical vapor deposition is investigated using picosecond time-resolved photoluminescence at 11K.Room temperature Hall effect measurements show both high sheet carrier concentrations (∼1×1013 cm-2) and high mobilities (∼1000 cm2/Vs), suggesting the formation of a two-dimensional electron gas (2DEG) at the heterointerface. The luminescence transient of the 3.481 eV emissions, which is usually assigned to donor-bound exciton emission of GaN, consists of an initial fast component and a slow second component. Samples with higher aluminum concentrations show broad luminescence peaks in the spectral range of 3.41—3.45 eV with long decay lifetimes over 1 ns. In addition, the below bandgap emissions saturate at high excitation power and shift toward lower energies with increasing time delay. The observed emissions are explained by the recombination processes involving the 2DEG at the heterointerface.

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