Model for Epitaxial growth of Cobalt on CU(100)

1989 ◽  
Vol 160 ◽  
Author(s):  
Dimitri D. Vvedensky ◽  
Shaun Clarke
Keyword(s):  
Epitaxial Growth ◽  
Growth Kinetics ◽  
Solid Model ◽  
Free Energies ◽  
Diffusion Parameters ◽  
The Difference ◽  
Kinetics Of

AbstractThe epitaxial growth kinetics of Co on Cu(100) are investigated with a kinetic solid-on-solid model. Two effects are found to dominate the growth of this system reflecting the difference in surface free energies betweenthe two materials: the difference of diffusion parameters, and the inability of Co to wet Cu(100) at lower temperatures.

The kinetics of Ge lateral overgrowth on SiO2

MRS Advances ◽  
2015 ◽  
Vol 1 (23) ◽  
pp. 1703-1708 ◽  
Author(s):  
M. Yako ◽  
N. J. Kawai ◽  
Y. Mizuno ◽  
K. Wada
Keyword(s):  
Growth Kinetics ◽  
Growth Rates ◽  
Growth Process ◽  
Theoretical Calculations ◽  
Film Formation ◽  
Lateral Overgrowth ◽  
Flat Film ◽  
The Difference ◽  
Kinetics Of

ABSTRACTThe kinetics of Ge lateral overgrowth on SiO2 with line-shaped Si seeds is examined. The growth process is described by the difference between the growth rates of Ge on (100) planes (GR100) and <311> facets (GR311). The theoretical calculations well reproduce the growth kinetics. It is shown that narrowing the line-seeds helps Ge coalescence and flat film formation.

Stressed solid-phase epitaxial growth of (011) Si

2009 ◽  
Vol 24 (2) ◽  
pp. 305-309 ◽  
Author(s):  
N.G. Rudawski ◽  
K.S. Jones ◽  
R. Gwilliam
Keyword(s):  
Epitaxial Growth ◽  
Growth Kinetics ◽  
Growth Velocity ◽  
Activation Volume ◽  
Solid Phase ◽  
Uniaxial Stress ◽  
Atomistic Model ◽  
Substrate Orientation ◽  
Free Case ◽  
Kinetics Of

The solid-phase epitaxial growth kinetics of amorphized (011) Si with application of in-plane uniaxial stress to magnitude of 0.9 ± 0.1 GPa were studied. Tensile stresses did not appreciably change the growth velocity compared with the stress-free case, whereas compression tended to retard the growth velocity to approximately one-half the stress-free value. The results are explained using a prior generalized atomistic model of stressed solid-solid phase transformations. In conjunction with prior observations of stressed solid-phase epitaxial growth of (001) Si, it is advanced that the activation volume tensor associated with ledge migration may be substrate orientation-dependent.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Growth Kinetics of Quantum Size ZnO Particles

1998 ◽  
Vol 536 ◽  
Author(s):  
E. M. Wong ◽  
J. E. Bonevich ◽  
P. C. Searson
Keyword(s):  
Growth Kinetics ◽  
Ostwald Ripening ◽  
Chemical Potential ◽  
Colloidal Suspensions ◽  
Green Emission ◽  
Blue Shift ◽  
Constant Current ◽  
Mass Model ◽  
Zno Particles ◽  
Kinetics Of

AbstractColloidal chemistry techniques were used to synthesize ZnO particles in the nanometer size regime. The particle aging kinetics were determined by monitoring the optical band edge absorption and using the effective mass model to approximate the particle size as a function of time. We show that the growth kinetics of the ZnO particles follow the Lifshitz, Slyozov, Wagner theory for Ostwald ripening. In this model, the higher curvature and hence chemical potential of smaller particles provides a driving force for dissolution. The larger particles continue to grow by diffusion limited transport of species dissolved in solution. Thin films were fabricated by constant current electrophoretic deposition (EPD) of the ZnO quantum particles from these colloidal suspensions. All the films exhibited a blue shift relative to the characteristic green emission associated with bulk ZnO. The optical characteristics of the particles in the colloidal suspensions were found to translate to the films.

Growth kinetics of boride layers formed on GGG 40.3 ductile iron

2016 ◽  
Vol 58 (5) ◽  
pp. 418-421
Author(s):  
Fatma Ünal ◽  
Ahmet Topuz
Keyword(s):  
Growth Kinetics ◽  
Ductile Iron ◽  
Kinetics Of
Sign in / Sign up

Export Citation Format

Share Document