Effect of positive and negative ion energies on H−destruction by mutual neutralization in low‐pressure plasmas

1985 ◽  
Vol 57 (9) ◽  
pp. 4342-4348 ◽  
Author(s):  
A. M. Bruneteau ◽  
M. Bacal
Keyword(s):  
Low Pressure ◽  
Negative Ion ◽  
Ion Energies

rf modulation of positive‐ion energies in low‐pressure discharges

1990 ◽  
Vol 68 (11) ◽  
pp. 5519-5527 ◽  
Author(s):  
S. G. Ingram ◽  
N. St. J. Braithwaite
Keyword(s):  
Low Pressure ◽  
Ion Energies ◽  
Positive Ion

Global model analysis of negative ion generation in low-pressure inductively coupled hydrogen plasmas with bi-Maxwellian electron energy distributions

2015 ◽  
Vol 22 (3) ◽  
pp. 033506 ◽  
Author(s):  
Sung-Ryul Huh ◽  
Nam-Kyun Kim ◽  
Bong-Ki Jung ◽  
Kyoung-Jae Chung ◽  
Yong-Seok Hwang ◽  
...  
Keyword(s):  
Electron Energy ◽  
Low Pressure ◽  
Model Analysis ◽  
Global Model ◽  
Negative Ion ◽  
Energy Distributions ◽  
Inductively Coupled ◽  
Hydrogen Plasmas ◽  
Ion Generation

Negative-ion bombardment increases during low-pressure sputtering deposition and their effects on the crystallinities and piezoelectric properties of scandium aluminum nitride films

2021 ◽  
Author(s):  
Takumi Tominaga ◽  
Shinji Takayanagi ◽  
Takahiko Yanagitani
Keyword(s):  
Acoustic Wave ◽  
Aluminum Nitride ◽  
Piezoelectric Properties ◽  
Negative Ions ◽  
Ion Bombardment ◽  
Low Pressure ◽  
Film Deposition ◽  
Negative Ion ◽  
Sputtering Deposition ◽  
Low Pressures

Abstract Scandium aluminum nitride (ScAlN) films are being actively researched to explore their potential for use in bulk acoustic wave (BAW) and surface acoustic wave (SAW) resonators because of their good piezoelectric properties. Sputtering is commonly used in ScAlN film deposition. Unfortunately, it has been reported that film quality metrics such as the crystallinity and piezoelectric properties can deteriorate before the Sc concentration reaches 43% without an isostructural phase transition. One reason for this is bombardment with negative ions generated from carbon and oxygen impurities in the Sc ingots. Because the number of negative ions increases during low-pressure sputtering deposition, their effect on film quality may be considerable. In this study, we investigated negative-ion bombardment of the substrate during sputtering deposition and its effects on ScAlN crystallinity and piezoelectric properties. Negative-ion energy distribution measurements indicated that many more negative ions collide with the substrate during ScAlN film deposition than during AlN deposition. In addition, decreasing the sputtering pressure further increased the number of negative ions and their energies. It is well known that film quality improves at low pressures because increasing the mean free path reduces thermalization and scattering of sputtered particles. Although, AlN crystallinity and piezoelectric properties improved at low pressures, the properties of ScAlN films deteriorated dramatically. Therefore, the results indicated that ion bombardment increase at low pressure adversely effects ScAlN crystal growth, deteriorating crystallinity and piezoelectric properties. ScAlN films may be improved further by suppressing negative-ion bombardment of the substrate.

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