Determination of aluminum‐silicon dioxide and silicon‐silicon dioxide barrier heights in a metal‐tunnel insulator‐silicon system

1985 ◽  
Vol 57 (4) ◽  
pp. 1256-1260 ◽  
Author(s):  
A. K. Duong ◽  
A. G. Nassibian
Keyword(s):  
Silicon Dioxide ◽  
Barrier Heights ◽  
Silicon System ◽  
Silicon Silicon ◽  
Aluminum Silicon

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Carrier tunneling in nanocrystalline silicon–silicon dioxide superlattices: A weak coupling model

2004 ◽  
Vol 69 (23) ◽  
Author(s):  
B. V. Kamenev ◽  
G. F. Grom ◽  
D. J. Lockwood ◽  
J. P. McCafrey ◽  
B. Laikhtman ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Weak Coupling ◽  
Coupling Model ◽  
Nanocrystalline Silicon ◽  
Carrier Tunneling ◽  
Silicon Silicon

Using neutral metastable argon atoms and contamination lithography to form nanostructures in silicon, silicon dioxide, and gold

1997 ◽  
Author(s):  
Kent S. Johnson ◽  
Karl K. Berggren ◽  
Andrew J. Black ◽  
Charles T. Black ◽  
Arthur P. Chu ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Silicon
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