C‐Vhysteresis in metal‐oxide‐semiconductor structures resulting from Pt doping of the gate oxide

1984 ◽  
Vol 56 (10) ◽  
pp. 3014-3017 ◽  
Author(s):  
Bogdan Golja ◽  
Armenag G. Nassibian
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures

Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates

1998 ◽  
Vol 27 (4) ◽  
pp. L21-L25 ◽  
Author(s):  
H. S. Kim ◽  
D. H. Ko ◽  
D. L. Bae ◽  
N. I. Lee ◽  
D. W. Kim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures

Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures

2002 ◽  
Vol 80 (14) ◽  
pp. 2514-2516 ◽  
Author(s):  
Dae-Gyu Park ◽  
Kwan-Yong Lim ◽  
Heung-Jae Cho ◽  
Tae-Ho Cha ◽  
In-Seok Yeo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures

Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures

1989 ◽  
Vol 20 (6) ◽  
pp. 27-39 ◽  
Author(s):  
J. Suñé ◽  
I. Placencia ◽  
E. Farrés ◽  
N. Barniol ◽  
F. Martin ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Breakdown ◽  
Semiconductor Structures
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