Si‐doped GaAs epitaxial layers grown by metalorganic chemical vapor deposition

K. Okamoto; S. Onozawa; T. Imai

doi:10.1063/1.333772

Si‐doped GaAs epitaxial layers grown by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.333772 ◽

1984 ◽

Vol 56 (10) ◽

pp. 2993-2995 ◽

Cited By ~ 13

Author(s):

K. Okamoto ◽

S. Onozawa ◽

T. Imai

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Layers ◽

Si Doped ◽

Metalorganic Chemical

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DXcenters in Si‐doped AlxGa1−xAs grown by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.346650 ◽

1990 ◽

Vol 68 (4) ◽

pp. 1669-1673

Author(s):

K. Okamoto ◽

H. Koizumi ◽

K. Yamaguchi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Si Doped ◽

Metalorganic Chemical

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Growth of ultrapure and Si‐doped InP by low pressure metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.95562 ◽

1985 ◽

Vol 46 (5) ◽

pp. 476-478 ◽

Cited By ~ 51

Author(s):

M. A. Di Forte‐Poisson ◽

C. Brylinski ◽

J. P. Duchemin

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Si Doped ◽

Metalorganic Chemical

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Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/6.0000284 ◽

2020 ◽

Vol 38 (5) ◽

pp. 052205

Author(s):

Makoto Miyoshi ◽

Taiki Nakabayashi ◽

Mizuki Yamanaka ◽

Takashi Egawa ◽

Tetsuya Takeuchi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Electrical Characterization ◽

Chemical Vapor ◽

Si Doped ◽

Lattice Matched ◽

Metalorganic Chemical

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Heavily Si‐doped GaAs grown by low‐pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane

Applied Physics Letters ◽

10.1063/1.106645 ◽

1992 ◽

Vol 60 (4) ◽

pp. 489-491 ◽

Cited By ~ 23

Author(s):

S. Chichibu ◽

A. Iwai ◽

S. Matsumoto ◽

H. Higuchi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Si Doped ◽

Metalorganic Chemical

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Characteristics of Si‐doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source

Applied Physics Letters ◽

10.1063/1.98579 ◽

1987 ◽

Vol 51 (20) ◽

pp. 1634-1636 ◽

Cited By ~ 7

Author(s):

Chee‐Wee Liu ◽

Sheng‐Li Chen ◽

Jyh‐pyng Lay ◽

Si‐Chen Lee ◽

Hao‐Hsiung Lin

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Si Doped ◽

Metalorganic Chemical

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The growth and characterization of CdTe epitaxial layers on CdTe and InSb by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.336193 ◽

1985 ◽

Vol 58 (2) ◽

pp. 757-762 ◽

Cited By ~ 27

Author(s):

C. H. Wang ◽

K. Y. Cheng ◽

S. J. Yang ◽

F. C. Hwang

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Layers ◽

Metalorganic Chemical

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Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied Physics Letters ◽

10.1063/1.4903058 ◽

2014 ◽

Vol 105 (22) ◽

pp. 222101 ◽

Cited By ~ 30

Author(s):

Zachary Bryan ◽

Isaac Bryan ◽

Benjamin E. Gaddy ◽

Pramod Reddy ◽

Lindsay Hussey ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Fermi Level ◽

Point Defects ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Level Control ◽

Chemical Vapor Deposition Growth ◽

Si Doped ◽

Metalorganic Chemical

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Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/s11664-001-0210-0 ◽

2001 ◽

Vol 30 (1) ◽

pp. 23-26 ◽

Cited By ~ 4

Author(s):

Y. Kokubun ◽

J. Nishio ◽

M. Abe ◽

T. Ehara ◽

S. Nakagomi

Keyword(s):

Chemical Vapor Deposition ◽

Growth Rates ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Growth ◽

Epitaxial Layers ◽

Metalorganic Chemical

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Hg1−xCdxTe epitaxial layers grown by low mercury partial pressure metalorganic chemical vapor deposition and extended defect characterization.

Journal of Crystal Growth ◽

10.1016/0022-0248(92)90713-s ◽

1992 ◽

Vol 117 (1-4) ◽

pp. 37-43 ◽

Cited By ~ 5

Author(s):

K. Shigenaka ◽

T. Uemoto ◽

L. Sugiura ◽

K. Ichizono ◽

K. Hirahara ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Partial Pressure ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Layers ◽

Defect Characterization ◽

Extended Defect ◽

Metalorganic Chemical

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Limited reaction processing: Growth of III‐V epitaxial layers by rapid thermal metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.97226 ◽

1986 ◽

Vol 49 (25) ◽

pp. 1720-1722 ◽

Cited By ~ 26

Author(s):

S. Reynolds ◽

D. W. Vook ◽

J. F. Gibbons

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Layers ◽

Reaction Processing ◽

Metalorganic Chemical

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