Limited reaction processing: Growth of III‐V epitaxial layers by rapid thermal metalorganic chemical vapor deposition

S. Reynolds; D. W. Vook; J. F. Gibbons

doi:10.1063/1.97226

Limited reaction processing: Growth of III‐V epitaxial layers by rapid thermal metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.97226 ◽

1986 ◽

Vol 49 (25) ◽

pp. 1720-1722 ◽

Cited By ~ 26

Author(s):

S. Reynolds ◽

D. W. Vook ◽

J. F. Gibbons

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Layers ◽

Reaction Processing ◽

Metalorganic Chemical

Download Full-text

The growth and characterization of CdTe epitaxial layers on CdTe and InSb by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.336193 ◽

1985 ◽

Vol 58 (2) ◽

pp. 757-762 ◽

Cited By ~ 27

Author(s):

C. H. Wang ◽

K. Y. Cheng ◽

S. J. Yang ◽

F. C. Hwang

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Layers ◽

Metalorganic Chemical

Download Full-text

Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/s11664-001-0210-0 ◽

2001 ◽

Vol 30 (1) ◽

pp. 23-26 ◽

Cited By ~ 4

Author(s):

Y. Kokubun ◽

J. Nishio ◽

M. Abe ◽

T. Ehara ◽

S. Nakagomi

Keyword(s):

Chemical Vapor Deposition ◽

Growth Rates ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Growth ◽

Epitaxial Layers ◽

Metalorganic Chemical

Download Full-text

Hg1−xCdxTe epitaxial layers grown by low mercury partial pressure metalorganic chemical vapor deposition and extended defect characterization.

Journal of Crystal Growth ◽

10.1016/0022-0248(92)90713-s ◽

1992 ◽

Vol 117 (1-4) ◽

pp. 37-43 ◽

Cited By ~ 5

Author(s):

K. Shigenaka ◽

T. Uemoto ◽

L. Sugiura ◽

K. Ichizono ◽

K. Hirahara ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Partial Pressure ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Layers ◽

Defect Characterization ◽

Extended Defect ◽

Metalorganic Chemical

Download Full-text

Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2005.02.070 ◽

2005 ◽

Vol 279 (3-4) ◽

pp. 335-340 ◽

Cited By ~ 5

Author(s):

Jiejun Wu ◽

Xiuxun Han ◽

Jiemin Li ◽

Dabing Li ◽

Yuan Lu ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Layers ◽

Metalorganic Chemical

Download Full-text

Origins of threading dislocations in GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.1352699 ◽

2001 ◽

Vol 78 (11) ◽

pp. 1544-1546 ◽

Cited By ~ 70

Author(s):

V. Narayanan ◽

K. Lorenz ◽

Wook Kim ◽

S. Mahajan

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Layers ◽

Threading Dislocations ◽

Metalorganic Chemical

Download Full-text

Effects of mercury partial pressure on defects in HgTe epitaxial layers grown by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(92)90715-u ◽

1992 ◽

Vol 117 (1-4) ◽

pp. 49-53 ◽

Cited By ~ 2

Author(s):

K. Shigenaka ◽

T. Kanno ◽

M. Saga ◽

T. Uemoto ◽

L. Sugiura ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Partial Pressure ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Layers ◽

Metalorganic Chemical

Download Full-text

CuAlSe2 chalcopyrite epitaxial layers grown by low-pressure metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90207-d ◽

1993 ◽

Vol 131 (3-4) ◽

pp. 551-559 ◽

Cited By ~ 19

Author(s):

S. Chichibu ◽

S. Shirakata ◽

A. Iwai ◽

S. Matsumoto ◽

H. Higuchi ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Epitaxial Layers ◽

Metalorganic Chemical

Download Full-text

Activation ratio of Fe in Fe‐doped semi‐insulating InP epitaxial layers grown by liquid phase epitaxy and metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.97845 ◽

1987 ◽

Vol 50 (20) ◽

pp. 1432-1434 ◽

Cited By ~ 21

Author(s):

M. Sugawara ◽

M. Kondo ◽

K. Nakai ◽

A. Yamaguchi ◽

K. Nakajima

Keyword(s):

Chemical Vapor Deposition ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Layers ◽

Activation Ratio ◽

Metalorganic Chemical

Download Full-text

Si‐doped GaAs epitaxial layers grown by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.333772 ◽

1984 ◽

Vol 56 (10) ◽

pp. 2993-2995 ◽

Cited By ~ 13

Author(s):

K. Okamoto ◽

S. Onozawa ◽

T. Imai

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Layers ◽

Si Doped ◽

Metalorganic Chemical

Download Full-text

P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/s11664-998-0388-5 ◽

1998 ◽

Vol 27 (4) ◽

pp. 206-209 ◽

Cited By ~ 12

Author(s):

C. J. Eiting ◽

P. A. Grudowski ◽

R. D. Dupuis

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Layers ◽

Metalorganic Chemical

Download Full-text