Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

2014 ◽  
Vol 105 (22) ◽  
pp. 222101 ◽  
Author(s):  
Zachary Bryan ◽  
Isaac Bryan ◽  
Benjamin E. Gaddy ◽  
Pramod Reddy ◽  
Lindsay Hussey ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Fermi Level ◽  
Point Defects ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Level Control ◽  
Chemical Vapor Deposition Growth ◽  
Si Doped ◽  
Metalorganic Chemical

Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

1987 ◽  
Vol 102 ◽  
Author(s):  
P.-Y. Lu ◽  
L. M. Williams ◽  
C.-H. Wang ◽  
S. N. G. Chu ◽  
M. H. Ross
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Chemical Vapor Deposition Growth ◽  
Deposition Processes ◽  
Cdznte Substrates ◽  
First Time ◽  
Metalorganic Chemical

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN

1999 ◽  
Vol 38 (Part 2, No. 7A) ◽  
pp. L703-L705 ◽  
Author(s):  
Takayuki Yuasa ◽  
Yoshihiro Ueta ◽  
Yuhzoh Tsuda ◽  
Atushi Ogawa ◽  
Mototaka Taneya ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Sapphire Substrate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Metalorganic Chemical

Characteristics of Si‐doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source

1987 ◽  
Vol 51 (20) ◽  
pp. 1634-1636 ◽  
Author(s):  
Chee‐Wee Liu ◽  
Sheng‐Li Chen ◽  
Jyh‐pyng Lay ◽  
Si‐Chen Lee ◽  
Hao‐Hsiung Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Si Doped ◽  
Metalorganic Chemical
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