Aging characteristics of 1.65‐μm InGaAs/InP buried heterostructure lasers grown by molecular‐beam and liquid phase epitaxy

1984 ◽  
Vol 55 (3) ◽  
pp. 656-659 ◽  
Author(s):  
H. Asahi ◽  
M. Fukuda ◽  
Y. Kawamura ◽  
Y. Noguchi ◽  
H. Nagai ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Molecular Beam ◽  
Buried Heterostructure

Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
I.I. Izhnin ◽  
I.A. Denisov ◽  
N.A. Smirnova ◽  
M. Pociask ◽  
K.D. Mynbaev
Keyword(s):  
Liquid Phase ◽  
Thermal Treatment ◽  
Liquid Phase Epitaxy ◽  
Defect Structure ◽  
Molecular Beam ◽  
Donor Concentration ◽  
Ion Milling ◽  
High Concentration ◽  
Low Temperature Annealing ◽  
Cdznte Substrates

AbstractIon milling, as a tool for “stirring” defects in HgCdTe by injecting high concentration of interstitial mercury atoms, was used for studying films grown by liquid phase epitaxy (LPE) on CdZnTe substrates. The films appeared to have very low residual donor concentration (∼1014 cm−3), yet, similar to the material grown by molecular beam epitaxy, contained Te-related neutral defects, which the milling activated electrically. It is shown that ion milling has a stronger effect on HgCdTe defect structure than thermal treatment, and yet eventually brings the material to an “equilibrium” state with defect concentration lower than that after low-temperature annealing.

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