GaAs‐AlxGa1−xAs buried‐heterostructure lasers grown by molecular beam epitaxy with Al0.65Ga0.35As (Ge‐doped) liquid phase epitaxy overgrown layer for current injection confinement

1980 ◽  
Vol 36 (9) ◽  
pp. 730-733 ◽  
Author(s):  
W. T. Tsang ◽  
R. A. Logan
Keyword(s):  
Liquid Phase ◽  
Molecular Beam Epitaxy ◽  
Liquid Phase Epitaxy ◽  
Molecular Beam ◽  
Current Injection ◽  
Buried Heterostructure

Aging characteristics of 1.65‐μm InGaAs/InP buried heterostructure lasers grown by molecular‐beam and liquid phase epitaxy

1984 ◽  
Vol 55 (3) ◽  
pp. 656-659 ◽  
Author(s):  
H. Asahi ◽  
M. Fukuda ◽  
Y. Kawamura ◽  
Y. Noguchi ◽  
H. Nagai ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Molecular Beam ◽  
Buried Heterostructure

scholarly journals Релаксационные потери магнитных возбуждений в наноразмерных пленках железо-иттриевого граната

2018 ◽  
Vol 44 (13) ◽  
pp. 10 ◽  
Author(s):  
Л.В. Луцев ◽  
С.М. Сутурин ◽  
А.М. Коровин ◽  
В.Э. Бурсиан ◽  
Н.С. Соколов
Keyword(s):  
Liquid Phase ◽  
Molecular Beam Epitaxy ◽  
Ferromagnetic Resonance ◽  
Liquid Phase Epitaxy ◽  
Molecular Beam ◽  
Thick Films ◽  
Relaxation Processes ◽  
Resonance Linewidth ◽  
Nanoscale Films ◽  
Ferromagnetic Resonance Linewidth

AbstractRelaxation losses of magnetic excitations in nanoscale films of Y_3Fe_5O_12 (YIG) were studied. The films were obtained by laser molecular-beam epitaxy (LMBE). Ferromagnetic resonance linewidth Δ H was found to increase sharply as the temperature decreased from 300 to 77 K. The observed growth of Δ H is explained by typical relaxation processes caused by the presence of Fe^2+ ions. This effect is not observed in thick films of YIG grown by liquid-phase epitaxy and containing Pb^4+ ions, and, hence, we have concluded that the presence of acceptor ions in YIG films obtained by LMBE will facilitate decreasing the concentration of Fe^2+ ions and, a result, diminishing relaxation losses.

Background donor concentration in HgCdTe

2015 ◽  
Vol 23 (3) ◽  
Author(s):  
I.I. Izhnin ◽  
K.D. Mynbaev ◽  
A.V. Voitsekhovsky ◽  
A.G. Korotaev ◽  
O.I. Fitsych ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Molecular Beam Epitaxy ◽  
Liquid Phase Epitaxy ◽  
Molecular Beam ◽  
Donor Concentration ◽  
Bulk Crystals ◽  
Ion Milling ◽  
Si Substrates ◽  
Different Types

AbstractStudies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating acceptors. In bulk crystals, films grown with liquid phase epitaxy and films fabricated with molecular beam epitaxy (MBE) on Si substrates, BDC of the order of ~10

Luminescence Properties of GaAs Epitaxial Layers Grown By Liquid Phase Epitaxy and Molecular Beam Epitaxy

1980 ◽  
Vol 2 ◽  
Author(s):  
P. M. Petroff
Keyword(s):  
Liquid Phase ◽  
Molecular Beam Epitaxy ◽  
Liquid Phase Epitaxy ◽  
Scanning Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Degradation Process ◽  
Luminescence Properties ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Laser Devices

ABSTRACTThe luminescence properties of undoped GaAs-Ga1−x Alx As layers grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) are compared for double heterostructure and multiquantum well (MQW) superlattices. Low temperature cathodoluminescence and scanning transmission electron microscopy are used to identify the main luminescence centers and in some instances establish their origin. The possible effects of the observed luminescence features on the degradation process in GaAs-Gal−x Alx As laser devices grown by MBE and LPE are also discussed.

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