The role of solitons and the kinetics of precipitate growth in boron doped silicon–germanium alloys

1983 ◽  
Vol 54 (5) ◽  
pp. 2402-2406 ◽  
Author(s):  
N. Savvides
Keyword(s):  
Silicon Germanium ◽  
Boron Doped ◽  
Precipitate Growth ◽  
Doped Silicon ◽  
Kinetics Of ◽  
Silicon Germanium Alloys

Critical thickness of heavily boron-doped silicon-germanium alloys

2006 ◽  
Vol 89 (20) ◽  
pp. 202118 ◽  
Author(s):  
Saurabh Chopra ◽  
Mehmet C. Ozturk ◽  
Veena Misra ◽  
Kris McGuire ◽  
L. E. McNeil
Keyword(s):  
Silicon Germanium ◽  
Critical Thickness ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Germanium Alloys

Effect of Dopant Concentration on the Growth of Oxide Precipitates in Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
Satoru Matsumoto ◽  
Ichiro Ishihara ◽  
Hiroyuki Kaneko ◽  
Hirofumi Harada ◽  
Takao Abe
Keyword(s):  
Electron Microscopy ◽  
Doping Concentration ◽  
Dopant Concentration ◽  
The Other ◽  
Boron Doped ◽  
Transmission Electron ◽  
Precipitate Growth ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Precipitate Density

ABSTRACTThe dependences of dopant species and concentrations on the growth of oxide precipitates have been studied using transmission electron microscopy. Doping species are phosphorus, antimony and boron. Samples were annealed at 800°C and 850°C for 24∼384hr in dry nitrogen. In phosphorus-doped silicon, the precipitate density is independent of doping concentration and the growth of precipitate obeys the three-quarter power law. The enhancement of the precipitate growth is observed in antimony-doped silicon. On the other hand, the precipitate growth is suppressed in heavily boron-doped silicon as compared with that of lightly boron-doped silicon. This indicates the generation of excess silicon interstitials in heavily boron-doped silicon.

Ion blistering of boron-doped silicon: The critical role of defect passivation

2005 ◽  
Vol 87 (23) ◽  
pp. 231908 ◽  
Author(s):  
N. Desrosiers ◽  
A. Giguère ◽  
O. Moutanabbir ◽  
B. Terreault
Keyword(s):  
Critical Role ◽  
Boron Doped ◽  
Defect Passivation ◽  
Doped Silicon

Investigation of the Promotion Effect of Germane in Low Temperature Uhv-Cvd Silicon

1987 ◽  
Vol 102 ◽  
Author(s):  
Kevin J. Uram ◽  
Bernard S. Meyerson
Keyword(s):  
Low Temperature ◽  
Silicon Germanium ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Single Crystal Silicon ◽  
Gas Mixture ◽  
Crystal Silicon ◽  
Germanium Silicon ◽  
Kinetics Of ◽  
Silicon Germanium Alloys

ABSTRACTHigh quality, low defect density, single crystalline silicon/germanium alloys have been grown on Si(100) substrate wafers in a low temperature UHV-CVD reactor. Using a silane/germane gaseous source, the growth rate of the epitaxial layer increases from 4 angstroms/minute with no germane present to 82 angstroms/minute with 12.7% germane present in the reaction gas mixture at 550C. The germanium/silicon ratio in the deposited alloy is a factor of two greater than the germane/silane ratio in the reaction gas mixture. The kinetics of this effect are studied and correlation to UHV hydrogen thermal desorption from single crystal silicon-germanium alloys are made.

scholarly journals Role of aluminum in silver paste contact to boron-doped silicon emitters

AIP Advances ◽  
2017 ◽  
Vol 7 (1) ◽  
pp. 015306 ◽  
Author(s):  
Wei Wu ◽  
Katherine E. Roelofs ◽  
Shekhar Subramoney ◽  
Kathryn Lloyd ◽  
Lei Zhang
Keyword(s):  
Silver Paste ◽  
Boron Doped ◽  
Doped Silicon

Noncrucial Role of the Defects in the Splitting for Hydrogen Implanted Silicon With High Boron Concentration

1998 ◽  
Vol 540 ◽  
Author(s):  
V.P. Popov ◽  
V.F. Stas ◽  
I.V. Antonova
Keyword(s):  
Structural Properties ◽  
Boron Concentration ◽  
Local Stress ◽  
Gas Pressure ◽  
Boron Doped ◽  
Doped Silicon ◽  
High Boron

AbstractThe present work deals with the investigation of the electrical and structural properties of heavily boron-doped silicon irradiated by hydrogen. Blistering and splitting processes are enhanced with an increase in boron concentration in the crystal. The measured values of perpendicular strain are over 0.7% which corresponds to a gas overpressure of 0.5 GPa. Processes which lead to blistering and splitting is better described in the frame of a gas pressure model than a model of local stress caused by the defects.

Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

2016 ◽  
Vol 119 (15) ◽  
pp. 155703 ◽  
Author(s):  
B. Sermage ◽  
Z. Essa ◽  
N. Taleb ◽  
M. Quillec ◽  
J. Aubin ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Electrochemical Capacitance ◽  
Capacitance Voltage ◽  
Doped Silicon ◽  
Silicon Germanium Alloys
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