scholarly journals Role of aluminum in silver paste contact to boron-doped silicon emitters

AIP Advances ◽  
2017 ◽  
Vol 7 (1) ◽  
pp. 015306 ◽  
Author(s):  
Wei Wu ◽  
Katherine E. Roelofs ◽  
Shekhar Subramoney ◽  
Kathryn Lloyd ◽  
Lei Zhang
Keyword(s):  
Silver Paste ◽  
Boron Doped ◽  
Doped Silicon

Ion blistering of boron-doped silicon: The critical role of defect passivation

2005 ◽  
Vol 87 (23) ◽  
pp. 231908 ◽  
Author(s):  
N. Desrosiers ◽  
A. Giguère ◽  
O. Moutanabbir ◽  
B. Terreault
Keyword(s):  
Critical Role ◽  
Boron Doped ◽  
Defect Passivation ◽  
Doped Silicon

Noncrucial Role of the Defects in the Splitting for Hydrogen Implanted Silicon With High Boron Concentration

1998 ◽  
Vol 540 ◽  
Author(s):  
V.P. Popov ◽  
V.F. Stas ◽  
I.V. Antonova
Keyword(s):  
Structural Properties ◽  
Boron Concentration ◽  
Local Stress ◽  
Gas Pressure ◽  
Boron Doped ◽  
Doped Silicon ◽  
High Boron

AbstractThe present work deals with the investigation of the electrical and structural properties of heavily boron-doped silicon irradiated by hydrogen. Blistering and splitting processes are enhanced with an increase in boron concentration in the crystal. The measured values of perpendicular strain are over 0.7% which corresponds to a gas overpressure of 0.5 GPa. Processes which lead to blistering and splitting is better described in the frame of a gas pressure model than a model of local stress caused by the defects.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

scholarly journals Low-coherence photonic method of electrochemical processes monitoring

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Monika Kosowska ◽  
Paweł Jakóbczyk ◽  
Michał Rycewicz ◽  
Alex Vitkin ◽  
Małgorzata Szczerska
Keyword(s):  
Electrochemical Process ◽  
Electrochemical Measurements ◽  
Boron Doped Diamond ◽  
Silica Substrate ◽  
Low Coherence ◽  
Optical Responses ◽  
Boron Doped ◽  
Fabry Perot ◽  
Hybrid Characterization

AbstractWe present an advanced multimodality characterization platform for simultaneous optical and electrochemical measurements of ferrocyanides. Specifically, we combined a fiber-optic Fabry–Perot interferometer with a three-electrode electrochemical setup to demonstrate a proof-of-principle of this hybrid characterization approach, and obtained feasibility data in its monitoring of electrochemical reactions in a boron-doped diamond film deposited on a silica substrate. The film plays the dual role of being the working electrode in the electrochemical reaction, as well as affording the reflectivity to enable the optical interferometry measurements. Optical responses during the redox reactions of the electrochemical process are presented. This work proves that simultaneous opto-electrochemical measurements of liquids are possible.

Highly Fluorescent Nitrogen and Boron Doped Carbon Quantum Dots for Selective and Sensitive Detection of Fe3+

2021 ◽  
Author(s):  
Yunhao Zhang ◽  
Hongxin Qin ◽  
Yuting Huang ◽  
Feng Zhang ◽  
Hairong Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Environmental Protection ◽  
Essential Role ◽  
Disease Diagnosis ◽  
Carbon Quantum Dots ◽  
Sensitive Detection ◽  
Boron Doped

Due to the essential role of Fe3+ in physiological and pathological processes, the detection of Fe3+ has drawn an increasing attention in the field of disease diagnosis and environmental protection....

Single-charge tunneling in uncoupled boron-doped silicon nanochains

2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee
Keyword(s):  
Single Charge ◽  
Boron Doped ◽  
Doped Silicon ◽  
Charge Tunneling

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells
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