Critical thickness of heavily boron-doped silicon-germanium alloys

2006 ◽  
Vol 89 (20) ◽  
pp. 202118 ◽  
Author(s):  
Saurabh Chopra ◽  
Mehmet C. Ozturk ◽  
Veena Misra ◽  
Kris McGuire ◽  
L. E. McNeil
Keyword(s):  
Silicon Germanium ◽  
Critical Thickness ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Germanium Alloys

Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

2016 ◽  
Vol 119 (15) ◽  
pp. 155703 ◽  
Author(s):  
B. Sermage ◽  
Z. Essa ◽  
N. Taleb ◽  
M. Quillec ◽  
J. Aubin ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Electrochemical Capacitance ◽  
Capacitance Voltage ◽  
Doped Silicon ◽  
Silicon Germanium Alloys

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

Single-charge tunneling in uncoupled boron-doped silicon nanochains

2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee
Keyword(s):  
Single Charge ◽  
Boron Doped ◽  
Doped Silicon ◽  
Charge Tunneling

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells

Influence of the Germanium content on the amorphization of silicon–germanium alloys during ion implantation

2013 ◽  
Vol 16 (6) ◽  
pp. 1655-1658 ◽  
Author(s):  
A. Belafhaili ◽  
L. Laânab ◽  
F. Cristiano ◽  
N. Cherkashin ◽  
A. Claverie
Keyword(s):  
Ion Implantation ◽  
Silicon Germanium ◽  
Germanium Content ◽  
Silicon Germanium Alloys
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