Ion blistering of boron-doped silicon: The critical role of defect passivation

2005 ◽  
Vol 87 (23) ◽  
pp. 231908 ◽  
Author(s):  
N. Desrosiers ◽  
A. Giguère ◽  
O. Moutanabbir ◽  
B. Terreault
Keyword(s):  
Critical Role ◽  
Boron Doped ◽  
Defect Passivation ◽  
Doped Silicon

Dislocations Induced by Heavy Boron Doping of Silicon

1991 ◽  
Vol 49 ◽  
pp. 814-815
Author(s):  
X. J. Ning ◽  
P. Pirouz
Keyword(s):  
Mechanical Properties ◽  
Critical Role ◽  
Boron Doping ◽  
Boron Diffusion ◽  
Boron Doped ◽  
Chemical Etch ◽  
Etch Stop

Diffusion-induced dislocations in silicon have long been of interest in semiconducting devices. Several investigations concerning the dislocations induced by doping of Si were carried out during the early sixties. However, there are still a number of unresolved questions concerning this problem. Because the boron doped chemical etch-stop technique is widely used in the fabrication of microsensors, new interest has arisen in the role of dislocations induced by boron diffusion and the behavior of these dislocations on the mechanical properties of microsensors. The doping of Si in this technique is heavy (>5x1019cm-3) and, consequently, the density of induced dislocations in the wafer is large. The dislocations will probably then play a critical role on the mechanical properties of thin Si wafers used in the etch-stop technique.

scholarly journals Role of aluminum in silver paste contact to boron-doped silicon emitters

AIP Advances ◽  
2017 ◽  
Vol 7 (1) ◽  
pp. 015306 ◽  
Author(s):  
Wei Wu ◽  
Katherine E. Roelofs ◽  
Shekhar Subramoney ◽  
Kathryn Lloyd ◽  
Lei Zhang
Keyword(s):  
Silver Paste ◽  
Boron Doped ◽  
Doped Silicon

Noncrucial Role of the Defects in the Splitting for Hydrogen Implanted Silicon With High Boron Concentration

1998 ◽  
Vol 540 ◽  
Author(s):  
V.P. Popov ◽  
V.F. Stas ◽  
I.V. Antonova
Keyword(s):  
Structural Properties ◽  
Boron Concentration ◽  
Local Stress ◽  
Gas Pressure ◽  
Boron Doped ◽  
Doped Silicon ◽  
High Boron

AbstractThe present work deals with the investigation of the electrical and structural properties of heavily boron-doped silicon irradiated by hydrogen. Blistering and splitting processes are enhanced with an increase in boron concentration in the crystal. The measured values of perpendicular strain are over 0.7% which corresponds to a gas overpressure of 0.5 GPa. Processes which lead to blistering and splitting is better described in the frame of a gas pressure model than a model of local stress caused by the defects.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

The Role of the SLP in Autism Spectrum Disorder Screening and Assessment

2008 ◽  
Vol 15 (2) ◽  
pp. 50-59 ◽  
Author(s):  
Amy Philofsky
Keyword(s):  
Language Development ◽  
Critical Role ◽  
Children With Autism ◽  
Autism Spectrum ◽  
Children With Asd ◽  
Prevalence Estimates ◽  
Notable Increase ◽  
Screening Assessment ◽  
Critical Components

AbstractRecent prevalence estimates for autism have been alarming as a function of the notable increase. Speech-language pathologists play a critical role in screening, assessment and intervention for children with autism. This article reviews signs that may be indicative of autism at different stages of language development, and discusses the importance of several psychometric properties—sensitivity and specificity—in utilizing screening measures for children with autism. Critical components of assessment for children with autism are reviewed. This article concludes with examples of intervention targets for children with ASD at various levels of language development.

A critical role of iNOS-derived Nitric Oxide (NO) and progesterone in implantation

1998 ◽  
Vol 5 (1) ◽  
pp. 115A-115A
Author(s):  
K CHWALISZ ◽  
E WINTERHAGER ◽  
T THIENEL ◽  
R GARFIELD
Keyword(s):  
Nitric Oxide ◽  
Critical Role
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