Evaluation of the Coulomb-limited mobility in high-κ dielectric metal oxide semiconductor field effect transistors

D. Casterman; M. M. De Souza

doi:10.1063/1.3319558

Evaluation of the Coulomb-limited mobility in high-κ dielectric metal oxide semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3319558 ◽

2010 ◽

Vol 107 (6) ◽

pp. 063706 ◽

Cited By ~ 7

Author(s):

D. Casterman ◽

M. M. De Souza

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Limited Mobility

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1499213 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3745-3751 ◽

Cited By ~ 145

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Limited Mobility ◽

Alloy Scattering

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Experimental study of uniaxial stress effects on Coulomb-limited mobility in p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2807832 ◽

2007 ◽

Vol 91 (20) ◽

pp. 203506 ◽

Cited By ~ 4

Author(s):

Shigeki Kobayashi ◽

Masumi Saitoh ◽

Yukio Nakabayashi ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Uniaxial Stress ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Limited Mobility ◽

Stress Effects ◽

P Type

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Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.362953 ◽

1996 ◽

Vol 80 (3) ◽

pp. 1567-1577 ◽

Cited By ~ 381

Author(s):

Shin‐ichi Takagi ◽

Judy L. Hoyt ◽

Jeffrey J. Welser ◽

James F. Gibbons

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Limited Mobility

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Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis

Journal of Applied Physics ◽

10.1063/1.3592252 ◽

2011 ◽

Vol 109 (11) ◽

pp. 113712 ◽

Cited By ~ 7

Author(s):

Yeonghun Lee ◽

Kuniyuki Kakushima ◽

Kenji Natori ◽

Hiroshi Iwai

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mobility Analysis ◽

Limited Mobility ◽

Spatially Resolved ◽

Corner Effects

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2054 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2054-2057 ◽

Cited By ~ 21

Author(s):

Syunichi Watabe ◽

Shigetoshi Sugawa ◽

Akinobu Teramoto ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Evaluation Method ◽

Statistical Evaluation ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature

Applied Physics Express ◽

10.7567/1882-0786/ab1b53 ◽

2019 ◽

Vol 12 (6) ◽

pp. 061003 ◽

Cited By ~ 1

Author(s):

Kidist Moges ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ultrahigh Temperature

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