Calculation of the threshold current of stripe‐geometry double‐heterostructure GaAs‐Ga1−xAlxAslasers, including a self‐consistent treatment of the current‐temperature dependence

1982 ◽  
Vol 53 (1) ◽  
pp. 149-155 ◽  
Author(s):  
T. J. S. Mattos ◽  
N. B. Patel ◽  
F. D. Nunes
Keyword(s):  
Temperature Dependence ◽  
Threshold Current ◽  
Double Heterostructure ◽  
Self Consistent ◽  
Consistent Treatment

Temperature dependence of threshold current in (GaAl)as double-heterostructure lasers with emission wavelengths of 0.74-0.9µm

1981 ◽  
Vol 17 (11) ◽  
pp. 2205-2210 ◽  
Author(s):  
T. Hayakawa ◽  
S. Yamamoto ◽  
H. Hayashi ◽  
T. Sakurai ◽  
T. Hijikata
Keyword(s):  
Temperature Dependence ◽  
Threshold Current ◽  
Double Heterostructure

Temperature dependence of the threshold current for InGaAlP visible laser diodes

1991 ◽  
Vol 27 (1) ◽  
pp. 23-29 ◽  
Author(s):  
M. Ishikawa ◽  
H. Shiozawa ◽  
K. Itaya ◽  
G.-I. Hatakoshi ◽  
Y. Uematsu
Keyword(s):  
Temperature Dependence ◽  
Laser Diodes ◽  
Threshold Current ◽  
Visible Laser

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold
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