Calculated temperature dependence of threshold current of GaAs‐AlxGa1−xAs double heterostructure lasers

1981 ◽  
Vol 52 (1) ◽  
pp. 70-73 ◽  
Author(s):  
N. K. Dutta
Keyword(s):  
Temperature Dependence ◽  
Threshold Current ◽  
Double Heterostructure ◽  
Calculated Temperature ◽  
Calculated Temperature Dependence

The Thermal Emission of Iodine

1974 ◽  
Vol 52 (19) ◽  
pp. 1862-1871
Author(s):  
J. David Brown ◽  
George Burns
Keyword(s):  
Experimental Data ◽  
Shock Wave ◽  
Temperature Dependence ◽  
Electronic State ◽  
Reasonable Agreement ◽  
Thermal Emission ◽  
Electronic States ◽  
Excited Electronic States ◽  
Calculated Temperature ◽  
Calculated Temperature Dependence

The temperature dependence of emission from iodine, heated in a shock wave to 1000 K–2000 K, has been measured at 4550, 5550, 6950, 7550, and 7820 Å. Preliminary measurements of the emission at 6380 Å were also made. The temperature dependence of the emission was calculated at these wavelengths for transitions to the ground electronic state X(1Σg+) of iodine from the excited electronic states, A(3Π1u), (1Π1u), and [Formula: see text]. The calculated results are in a reasonable agreement with experimental data. For the banded emission due to the B → X transition, a theory of the temperature dependence of emission was developed. At 6950, 7550, and 7820 Å, the results of this theory agree with the experimental data thus identifying the B → X transition as the source of emission at these wavelengths. The temperature dependence of emission at 4550 Å is consistent with calculated temperature dependence for either (1Π1u) → X or [Formula: see text] transitions. The temperature dependence of the emission at 5550 Å is consistent with calculated temperature dependence for the above two transitions, as well as for the A(3Π1u) → X transition.

Temperature dependence of threshold current in (GaAl)as double-heterostructure lasers with emission wavelengths of 0.74-0.9µm

1981 ◽  
Vol 17 (11) ◽  
pp. 2205-2210 ◽  
Author(s):  
T. Hayakawa ◽  
S. Yamamoto ◽  
H. Hayashi ◽  
T. Sakurai ◽  
T. Hijikata
Keyword(s):  
Temperature Dependence ◽  
Threshold Current ◽  
Double Heterostructure

Calculations on the rate of photodissociation of hexafluoroacetone

1968 ◽  
Vol 46 (2) ◽  
pp. 307-310 ◽  
Author(s):  
P. G. Bowers
Keyword(s):  
Temperature Dependence ◽  
Singlet State ◽  
Excited Singlet State ◽  
Kcal Mole ◽  
Excited Singlet ◽  
Calculated Temperature ◽  
Experimental Variation ◽  
Vibrational Levels ◽  
Calculated Temperature Dependence

The dissociation of hexafluoroacetone from high vibrational levels of its first excited singlet state is treated by the methods of RRKM unimolecular theory. Predictions of the relative photodissociation rates for various exciting wavelengths are in reasonable accord with the observed rates and indicate a critical predissociation energy of about 6 kcal/mole. The calculated temperature dependence is less satisfactory and somewhat lower than the experimental variation.

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