Temperature dependence of the threshold current density in InP‐Ga0.28In0.72As0.6P0.4(λ=1.3 μm) double heterostructure lasers

1984 ◽  
Vol 56 (7) ◽  
pp. 1959-1964 ◽  
Author(s):  
H. C. Casey
Keyword(s):  
Temperature Dependence ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold

Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm)

2012 ◽  
Vol 46 (9) ◽  
pp. 1211-1215 ◽  
Author(s):  
I. S. Shashkin ◽  
D. A. Vinokurov ◽  
A. V. Lyutetskiy ◽  
D. N. Nikolaev ◽  
N. A. Pikhtin ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Semiconductor Lasers ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density

Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm)

2010 ◽  
Vol 44 (10) ◽  
pp. 1370-1374 ◽  
Author(s):  
M. A. Ladugin ◽  
A. V. Lyutetskiy ◽  
A. A. Marmalyuk ◽  
A. A. Padalitsa ◽  
N. A. Pikhtin ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Semiconductor Lasers ◽  
Quantum Efficiency ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density
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