Properties of Spontaneous and Stimulated Emission in GaAs Junction Lasers. II. Temperature Dependence of Threshold Current and Excitation Dependence of Superradiance Spectra

1970 ◽  
Vol 2 (10) ◽  
pp. 4126-4134 ◽  
Author(s):  
C. J. Hwang
1991 ◽  
Vol 27 (1) ◽  
pp. 23-29 ◽  
Author(s):  
M. Ishikawa ◽  
H. Shiozawa ◽  
K. Itaya ◽  
G.-I. Hatakoshi ◽  
Y. Uematsu

2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.


1964 ◽  
Vol 5 (9) ◽  
pp. 174-176 ◽  
Author(s):  
G. C. Dousmanis ◽  
H. Nelson ◽  
D. L. Staebler

1980 ◽  
Vol 19 (10) ◽  
pp. L621-L624 ◽  
Author(s):  
Alfred R. Adams ◽  
Masahiro Asada ◽  
Yasuharu Suematsu ◽  
Shigehisa Arai

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