Temperature dependence of electron field effect mobility of laser recrystallized silicon film metal‐oxide‐semiconductor transistors

Han‐Sheng Lee

doi:10.1063/1.331252

Temperature dependence of electron field effect mobility of laser recrystallized silicon film metal‐oxide‐semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.331252 ◽

1982 ◽

Vol 53 (6) ◽

pp. 4250-4254 ◽

Cited By ~ 2

Author(s):

Han‐Sheng Lee

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Silicon Film ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Field Effect Mobility ◽

Electron Field

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Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

Applied Physics Letters ◽

10.1063/1.4821858 ◽

2013 ◽

Vol 103 (12) ◽

pp. 123511 ◽

Cited By ~ 373

Author(s):

Masataka Higashiwaki ◽

Kohei Sasaki ◽

Takafumi Kamimura ◽

Man Hoi Wong ◽

Daivasigamani Krishnamurthy ◽

...

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Simulation of Temperature Dependence of Microwave Noise in Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.1690 ◽

2000 ◽

Vol 39 (Part 1, No. 4A) ◽

pp. 1690-1693 ◽

Cited By ~ 4

Author(s):

Michael S. Obrecht ◽

Tajinder Manku ◽

Mohamed I. Elmasry

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Microwave Noise

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Gate length and temperature dependence of negative differential transconductance in silicon quantum well metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4931662 ◽

2015 ◽

Vol 118 (12) ◽

pp. 124505 ◽

Cited By ~ 7

Author(s):

Clint Naquin ◽

Mark Lee ◽

Hal Edwards ◽

Guru Mathur ◽

Tathagata Chatterjee ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length

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Extraction of oxide trap properties using temperature dependence of random telegraph signals in submicron metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1367404 ◽

2001 ◽

Vol 89 (10) ◽

pp. 5526-5532 ◽

Cited By ~ 38

Author(s):

Nuditha Vibhavie Amarasinghe ◽

Zeynep Çelik-Butler ◽

Abdol Keshavarz

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signals ◽

Oxide Trap

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Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.2395597 ◽

2006 ◽

Vol 100 (11) ◽

pp. 114508 ◽

Cited By ~ 62

Author(s):

A. Pérez-Tomás ◽

P. Brosselard ◽

P. Godignon ◽

J. Millán ◽

N. Mestres ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Field Effect Mobility ◽

Temperature Modeling

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Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms

Applied Physics Letters ◽

10.1063/1.3046725 ◽

2008 ◽

Vol 93 (24) ◽

pp. 243503 ◽

Cited By ~ 6

Author(s):

Xiaodong Yang ◽

Srivatsan Parthasarathy ◽

Yongke Sun ◽

Andrew Koehler ◽

Toshikazu Nishida ◽

...

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Mechanisms ◽

Insight Into

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Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+-Polysilicon/HfAlOx/SiO2N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.7750 ◽

2005 ◽

Vol 44 (11) ◽

pp. 7750-7755 ◽

Cited By ~ 10

Author(s):

Naoki Yasuda ◽

Hirokazu Hisamatsu ◽

Hiroyuki Ota ◽

Wataru Mizubayashi ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Weak Temperature Dependence

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The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics

Applied Physics Letters ◽

10.1063/1.2802729 ◽

2007 ◽

Vol 91 (17) ◽

pp. 173510 ◽

Cited By ~ 4

Author(s):

Hsiao-shuo Ho ◽

Ingram Yin-ku Chang ◽

Joseph Ya-min Lee

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Electron Mobility ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Mechanisms ◽

Mobility Degradation

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Temperature Dependence of Shallow-Trench-Isolation Mechanical Stress on n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.4161 ◽

2004 ◽

Vol 43 (7A) ◽

pp. 4161-4162

Author(s):

Jinn-Horng Lai ◽

Jeng Gong ◽

Tsuoe-Hsiang Liao ◽

David Cheng-Hsiung Chen

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Trench Isolation

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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