The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics

2007 ◽  
Vol 91 (17) ◽  
pp. 173510 ◽  
Author(s):  
Hsiao-shuo Ho ◽  
Ingram Yin-ku Chang ◽  
Joseph Ya-min Lee
Keyword(s):  
Metal Oxide ◽  
Temperature Dependence ◽  
Electron Mobility ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Degradation Mechanisms ◽  
Mobility Degradation

Degradation mechanisms of electron mobility in metal-oxide-semiconductor field-effect transistors with LaAlO3 gate dielectric

2009 ◽  
Vol 105 (10) ◽  
pp. 104512 ◽  
Author(s):  
Ingram Yin-ku Chang ◽  
Sheng-wen You ◽  
Main-gwo Chen ◽  
Pi-chun Juan ◽  
Chun-heng Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Electron Mobility ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Degradation Mechanisms

High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

2011 ◽  
Vol 4 (6) ◽  
pp. 064201 ◽  
Author(s):  
Tomonori Nishimura ◽  
Choong Hyun Lee ◽  
Toshiyuki Tabata ◽  
Sheng Kai Wang ◽  
Kosuke Nagashio ◽  
...  
Keyword(s):  
High Pressure ◽  
Metal Oxide ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility
Sign in / Sign up

Export Citation Format

Share Document