Properties and Applications of Molecular Beam Epitaxial Silicides

1986 ◽  
Vol 67 ◽  
Author(s):  
K. L. Wang ◽  
Y. C. Kao
Keyword(s):  
Integrated Circuits ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Solid Phase ◽  
Deep Level ◽  
Solid Phase Epitaxy ◽  
Molecular Beam Epitaxial ◽  
Barrier Heights ◽  
Metal Silicides ◽  
Microelectronics Technology

ABSTRACTTransition metal silicides are now being used as essential and integral elements of microelectronics technology. Epitaxial growth and deposition provide additional flexibility for many device and circuit applications.In this paper, various epitaxial growth techniques, namely solid phase epitaxy and molecular beam epitaxy are reviewed. The resulting morphology, crystallinity, and Schottky barrier heights as well as deep-level defects are contrasted. The parallel and perpendicular strains as a function of film thickness is reported.Application of the epitaxial silicide in improving conventional integrated circuits as well as in fabricating new devices are discussed.

Segregation and Trapping of Erbium in Silicon at a Crystal-Amorphous or Crystal-Vacuum Interface

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
R. Serna ◽  
J. S. Custer ◽  
M. Lohmeier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Growth Model ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetic Growth ◽  
Vacuum Interface ◽  
Amorphous Si

AbstractThe incorporation of erbium in silicon is studied during solid phase epitaxy (SPE) of Erimplanted amorphous Si on crystalline Si, and during Si molecular beam epitaxy (MBE). Segregation and trapping of Er is observed on Si(100), both during SPE and MBE. The trapping during SPE shows a discontinuous dependence on Er concentration, attributed to the effect of defect trap sites in the amorphous Si near the interface. Trapping during MBE is described by a continuous kinetic growth model. Above a critical Er density (which is lower for MBE than for SPE), growth instabilities occur, attributed to the formation of silicide precipitates. No segregation occurs during MBE on Si(111), attributed to the epitaxial growth of silicide precipitates.

Growth and Characterization of Heteroepitaxial GaAs on Semiconductor-on-Insulator and Insulating Substrates

1989 ◽  
Vol 145 ◽  
Author(s):  
T.P. Humphreys ◽  
K. Das ◽  
N.R. Parikh ◽  
J.B. Posthill ◽  
R.J. Nemanich ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Solid Phase Epitaxy ◽  
Molecular Beam Epitaxial ◽  
Chemical Vapor Deposited ◽  
Gaas Films ◽  
Molecular Beam Epitaxial Growth ◽  
Crystallographic Orientations

AbstractA systematic study pertaining to the molecular beam epitaxial growth and charac- terization of GaAs films on various crystallographic orientations of sapphire is presented. For integration with silicon circuitry, heteroepitaxial GaAs layers have also been grown on commercially-available chemical vapor deposited silicon-on-sapphire (SOS) and SOS substrates that have been upgraded by the double solid-phase epitaxy process.

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of low‐resistivity ZnSe films

1979 ◽  
Vol 35 (2) ◽  
pp. 97-98 ◽  
Author(s):  
Takafumi Yao ◽  
Yunosuke Makita ◽  
Shigeru Maekawa
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Low Resistivity ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm

2000 ◽  
Vol 208 (1-4) ◽  
pp. 93-99 ◽  
Author(s):  
Y Nakata ◽  
K Mukai ◽  
M Sugawara ◽  
K Ohtsubo ◽  
H Ishikawa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Light Emission ◽  
Molecular Beam Epitaxial ◽  
Self Assembled ◽  
Molecular Beam Epitaxial Growth
Sign in / Sign up

Export Citation Format

Share Document